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Two-Wave Mixing Gain vs Intensity Dependence in Photorefractive GaAs:EL2 in Presence of Strong Electron/Hole Competition

Published online by Cambridge University Press:  21 February 2011

Philippe Gravey ,
Nicole Wolffer ,
Gilbert Picoli ,
Olivier Renais  and
Jean-Emmanuel Viallet
Philippe Gravey
Affiliation:
Centre National d'Etudes des Télécommunications, LAB/OCM/TAC Route de Trégastel BP 40 22301 Lannion, France.
Nicole Wolffer
Affiliation:
Centre National d'Etudes des Télécommunications, LAB/OCM/TAC Route de Trégastel BP 40 22301 Lannion, France.
Gilbert Picoli
Affiliation:
Centre National d'Etudes des Télécommunications, LAB/OCM/TAC Route de Trégastel BP 40 22301 Lannion, France.
Olivier Renais
Affiliation:
Centre National d'Etudes des Télécommunications, LAB/OCM/TAC Route de Trégastel BP 40 22301 Lannion, France.
Jean-Emmanuel Viallet
Affiliation:
Centre National d'Etudes des Télécommunications, LAB/OCM/TAC Route de Trégastel BP 40 22301 Lannion, France.
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Abstract

We studied the pump intensity dependence of the 2WM gain in a photorefractive GaAs:EL2 crystal, with a 3.3 kV/cm d.c. field, at two different wavelengths. The grating period was 37 Am and the beam ratio was 4. At 1.32 μm, the characteristics exhibits a resonant behaviour (with a maximum of 0.23 cm-1). As for InP:Fe, these results can be explained by considering that thermally and optically generated carriers are of different types. The curve at 1.047 Am exhibits an original feature. At low intensities the gain as the same sign than at 1.32 μm (with a maximum of 0.12 cm-1), but the sign changes with increasing intensity and the gain tends towards an asymptotic value of -0.15 cm-1. Such behaviour may also be explained with the same model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 191
Copyright
Copyright © Materials Research Society 1992

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References

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