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Two-Layer LPE Hgcdte P-on-n 8-18μm Photodiodes

Published online by Cambridge University Press:  25 February 2011

E. E. Krueger ,
G. N. Pultz ,
P. W. Norton ,
J. A. Mroczkowski ,
M. H. Weiler  and
M. B. Reine
E. E. Krueger
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
G. N. Pultz
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
P. W. Norton
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
J. A. Mroczkowski
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
M. H. Weiler
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
M. B. Reine
Affiliation:
Loral Infrared & Imaging Systems, Lexington, Massachusetts 02173
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Abstract

This paper reports recent results on two-layer P-on-n LPE HgCdTe heterojunction photodiodes with cutoff wavelengths beyond 19μm. These results demonstrate the potential of photovoltaic HgCdTe detectors to satisfy the detector requirements of advanced NASA satellite instruments out to wavelengths of 17μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 93
Copyright
Copyright © Materials Research Society 1991

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References

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