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Two-Dimensional Structure of Reactive Silane Plasmas in the Presence of Crossed Magnetic and Electric Fields

Published online by Cambridge University Press:  21 February 2011

Hiroshi Fujiyama ,
H. Kawasaki ,
Y. Matsuda  and
N. Ohno
Hiroshi Fujiyama
Affiliation:
Faculty of Engineering, Nagasaki University 1–14, Nagasaki 852, Japan
H. Kawasaki
Affiliation:
Faculty of Engineering, Nagasaki University 1–14, Nagasaki 852, Japan
Y. Matsuda
Affiliation:
Faculty of Engineering, Nagasaki University 1–14, Nagasaki 852, Japan
N. Ohno
Affiliation:
Faculty of Engineering, Nagasaki University 1–14, Nagasaki 852, Japan
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Abstract

In order to control reactive silane(SiH4) glow discharge plasmas for an a-Si:H thin film synthesis, we have investigated the dependence of plasma parameters on the crossed magnetic field B perpendicular to the discharge electric field E. As the result of modification of plasma structure by a crossed magnetic field, subsequent modified profiles of optical emission from SiH radicals were observed. On the other hand, Hα, emission in the cathode sheath region, which may be caused by high energy secondary electrons(γ-electron), were not so much influenced by a magnetic field. By modulating the crossed magnetic field in AC discharge plasmas, the time-averaged uniform (2.5% inhomogeneity) profile of SiH radical could be realized near the substrate sustained outside the discharge region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 161
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Wasa, K. and Hayakawa, S., Rev. Sci. Instrum., 40, 693(1969).Google Scholar
2. Matsuo, S. and Kiuchi, M., Jpn. J. Appl. Phys., 22, L210 (1983).Google Scholar
3. Fujiyama, H. Yamashita, T., Takahashi, T., Matsuo, H., Murata, M., Kaneko, S. and Morita, S., Proc. of 8th ISPC, AV – 04, 1448 (1987).Google Scholar
4. Fujiyama, H. Yamashita, T. Takahashi, T. and Matsuo, H., Appl. Phys. Lett. 50, 1322 (1987).Google Scholar
5. Sommerer, T.J., Hitchon, W.N.G., and Lawler, J.E., Phys. Rev., 39, 6356 (1989).Google Scholar