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Two-dimensional modeling of organic field effect transistors

Published online by Cambridge University Press:  01 February 2011

T. Li ,
P. P. Ruden ,
I. H. Campbell  and
D. L. Smith
T. Li
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota Minneapolis, MN 55455, USA
P. P. Ruden
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota Minneapolis, MN 55455, USA
I. H. Campbell
Affiliation:
Los Alamos National Laboratory Los Alamos, NM 87545, USA
D. L. Smith
Affiliation:
Los Alamos National Laboratory Los Alamos, NM 87545, USA
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Abstract

We present device simulations for p-channel organic field effect transistors. The current conservation equation and Poisson's equation are solved self-consistently in two dimensions in the drift-diffusion approximation. We focus on modeling transistor structures consisting of a gate electrode, a silicon dioxide gate insulator, and a pentacene or a conjugated polymer layer as the active (channel) material. The source and drain contacts are taken to be deposited directly on the gate insulator (bottom contact structure). We examine the effects associated with differences in charge carrier injection for different source and drain contact materials. It is also shown that, if the organic material immediately adjacent to the contacts has poor conduction properties, ‘parasitic’ source and drain series resistances that depend on the contact/organic injection barrier height as well as the channel material mobility can result.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P10.2
Copyright
Copyright © Materials Research Society 2002

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