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Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

Published online by Cambridge University Press:  28 February 2011

M. M. Faye ,
L. Laanab ,
J. Beauvillain ,
A. Claverie ,
C. Vieu  and
G. Benassayag
M. M. Faye
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
L. Laanab
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
J. Beauvillain
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
A. Claverie
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
C. Vieu
Affiliation:
L2M/CNRS, 196 avenue H. Ravera, 92225 Bagneux, France
G. Benassayag
Affiliation:
L2M/CNRS, 196 avenue H. Ravera, 92225 Bagneux, France
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Abstract

A general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 783
Copyright
Copyright © Materials Research Society 1993

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References

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