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Two Step Growth and Characterization of BaF2/Si(III) Heterostructures

Published online by Cambridge University Press:  21 February 2011

A. Belenchuk ,
A. Fedorov ,
V. Lucash ,
A. Vasilyev  and
V. Zenchenco
A. Belenchuk
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
A. Fedorov
Affiliation:
Institute of Device Technology, Kharkov, Ukraina
V. Lucash
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
A. Vasilyev
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
V. Zenchenco
Affiliation:
Institute of Applied Physics, Kishinev 277028, Moldova
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Abstract

The influence of growth conditions on structural perfections and epitaxial relation in BaF2 films on Si(111) are considered. It is shown that rotational-twin-free BaF2 films (A-type orientation) can be grown on Si(111) by two step growth method. It is also shown that a mixed (A+B)-type orientation, which usually observed in BaF2 films grown by conventional one step growth method, can be converted into A-type orientation by postgrowth annealing. The correlation between type of epitaxial orientation in BaF2 films and structures of interface is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 337
Copyright
Copyright © Materials Research Society 1995

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References

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