Article contents
TWO DEFECT-RELATED PHOTOLUMINESCENCE SPECTRA AND CROSS-SECTION TEM OF MBE GROWN CdTe ON (100) InSb
Published online by Cambridge University Press: 28 February 2011
Abstract
A series of MBE grown CdTe films were grown on (100) InSb substrates. The substrate temperature, Ts, was varied from 170° to 285°C in eleven steps. Low temperature (∿2K) photoluminescence measurements and TEM have been combined to show a strong correlation between defect density and the details of the luminescence spectra. A natural division is obtained for samples grown with substrate temperatures from 285°C to 250°C (Region I) and from 225°C to 170°C (Region II).
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1986
References
- 1
- Cited by