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Twin-domain Epitaxial Growth and Metal-insulator Transition of VO2 Thin Film on C-Plane Sapphire

Published online by Cambridge University Press:  02 February 2011

Changhong Chen ,
Yong Zhao ,
Xuan Pan ,
Mark Holtz  and
Zhaoyang Fan
Changhong Chen
Affiliation:
Nano Tech Center and Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409-3102, U.S.A. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
Yong Zhao
Affiliation:
Nano Tech Center and Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409-3102, U.S.A.
Xuan Pan
Affiliation:
Nano Tech Center and Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409-3102, U.S.A.
Mark Holtz
Affiliation:
Nano Tech Center and Department of Physics, Texas Tech University, Lubbock, TX 79409-1051, U.S.A.
Zhaoyang Fan
Affiliation:
Nano Tech Center and Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409-3102, U.S.A.
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Abstract

We report heteroepitaxial growth of VO2 thin film on c-plane sapphire by pulsed DC magnetron sputtering. X-ray diffraction experiment indicates that the 150 nm thick film is in triple-domain (020)-epitaxial structure with six-fold rotational symmetry in the basal plane; in particular, off-axis Φ scans from (011) and (220) show twin and triple peaks in each group of the diffraction profiles due to angle β mismatch and V4+-V4+ dimerization, respectively. The epitaxial relationship between VO2 and c-plane sapphire can be concluded as be , with the in-plane lattice mismatch of 2.66% (tensile) along and the out-of-plane lattice mismatch of -2.19% (compressive). Temperature dependence of resistivity in van der Pauw method shows that the resistivity changes by ~5 orders of magnitude through the metal-insulator transition, and a narrow hysteresis window of ~3 K is obtained between cooling and heating cycles with respect to phase-transition temperatures at 347.1 and 350.1 K.

Keywords

metal-insulator transitionepitaxyx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k09-10
Copyright
Copyright © Materials Research Society 2011

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References

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