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Twin Stabilzed Planar Growth of Soi Films

Published online by Cambridge University Press:  28 February 2011

H. Baumgart ,
F. Phillipp ,
S. Ramesh ,
B. Khan ,
A. Martinez  and
E. Arnold
H. Baumgart
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
F. Phillipp
Affiliation:
Max Planck Institute for Metals Research, Heisenbergstr.1, D-7000 Stuttgart 80, W. Germany
S. Ramesh
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
B. Khan
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
A. Martinez
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
E. Arnold
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
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Abstract

The microstructure of beam recrystallized silicon-on-insulator (SOI) films is strongly dependent on nucleation and growth processes during zone-melt propagation. In general, the recrystallization takes place along the (100) plane and in the <001> direction and in this case subgrain boundaries form the only major defects in the material. We have, however, identified stable growth regimes that produce predominantly twin boundaries, when the SOl films recrystallize with their surface parallel to the (110) planes. The twin formation process is attributed to growth twinning characteristic for f.c.c. and diamond structures. It has been established that the majority of these boundaries consist of coherent twins. In this manner (110) textured SOl films can be grown which contain almost entirely twin boundaries as structural defects. The crystallography of coherent twin boundaries in SOI films and their dependence on growth parameters is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 65
Copyright
Copyright © Materials Research Society 1986

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References

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