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Tunnel Effects in Luminescence Spectra of InGaN/AlGaN/GaN Light-Emitting Diodes

Published online by Cambridge University Press:  10 February 2011

A. E. Yunovich ,
A. N. Kovalev ,
V. E. Kudryashov ,
F. I. Manyachin ,
A. N. Turkin  and
K. G. Zolina
A. E. Yunovich
Affiliation:
Moscow State Lomonosov University, Department of Physics
A. N. Kovalev
Affiliation:
Moscow Institute of Steel and Alloys, 119235, Leninsky Prospect, 4. 119899 Moscow, Russia. [email protected]
V. E. Kudryashov
Affiliation:
Moscow State Lomonosov University, Department of Physics
F. I. Manyachin
Affiliation:
Moscow Institute of Steel and Alloys, 119235, Leninsky Prospect, 4. 119899 Moscow, Russia. [email protected]
A. N. Turkin
Affiliation:
Moscow State Lomonosov University, Department of Physics
K. G. Zolina
Affiliation:
Moscow State Lomonosov University, Department of Physics
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Abstract

Tunnel effects in luminescence spectra and electrical properties of blue InGaN/AlGaN/GaN LEDs were studied. The tunnel radiation in a spectral region of 2.1–2.4 eV predominates at low currents (J<0.2 mA). The role of tunnel effects grows as the maximum of the main blue line in LEDs is shifted to short wavelengths. The position of the tunnel maximum ћωmax is approximatly proportional to the voltage eU. The spectral band is described by the theory of tunnel radiative recombination. Current-voltage characteristics have a tunnel component at low direct and reverse currents. The distribution of charged impurities was received from dynamic capacitance measurements. There are charged layers at heterointerfaces and adjacent compensated layers in the structures. There is a high electric field in the active layer. The energy diagram is analysed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1167
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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