Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-28T00:09:09.411Z Has data issue: false hasContentIssue false
  • English
  • Français

Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field

Published online by Cambridge University Press:  11 February 2011

Vladimir D. Kalganov ,
Nina V. Mileshkina ,
Elena V. Ostroumova  and
Ekaterina A. Rogacheva
Vladimir D. Kalganov
Affiliation:
Institute of Physics, St. Petersburg State University, 1 Ulianivskaja, Petrodvoretz, 198904, RUSSIA
Nina V. Mileshkina
Affiliation:
Institute of Physics, St. Petersburg State University, 1 Ulianivskaja, Petrodvoretz, 198904, RUSSIA
Elena V. Ostroumova
Affiliation:
Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytechnicheskaja, St.-Petersburg, 194021, RUSSIA.
Ekaterina A. Rogacheva
Affiliation:
Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytechnicheskaja, St.-Petersburg, 194021, RUSSIA.
Get access

Abstract

The photo-field emission properties of semiconductors at a very strong electric field together with tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunneltransparent layer of an insulator was studied. It was found that a self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation semiconductor field emitter detectors, and leads to the significant increase in their photosensitivity [1]. Also the appearance of a self-consistent quantum well near the semiconductor surface is the key factor which allows to use the metal-insulator heterojunction in the development of an Auger transistor based on the Al-SiO2-n-Si structure - the fastest operation semiconductor bipolar transistor [2–4]. Conditions for appearance of a self-consistent quantum well under strong electric field in both the near-surface region of a vacuum semiconductor field-emitter and metal-insulator-semiconductor heterostructures (Auger transistor) were studied also.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.25
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rogachev, A.A., Kalganov, V.D., Mileshkina, N.V. and Ostroumova, E.V., Microelectronics Journal 31, 905 (2000).Google Scholar
2. Ostroumova, E.V. and Rogachev, A.A., in: Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic-Scale Understanding, NATO Science Series, 3. High Technology, 47 (Kluwer Academic Dordrecht/Boston/London, 1998) pp. 383–390.Google Scholar
3. Ostroumova, E.V., Rogachev, A.A., Microelectronics Journal 29, 701, (1998.)Google Scholar
4. Ostroumova, E.V., Rogachev, A.A., Applied Surface Science 166, 480 (2000).Google Scholar
5. Grekhov, I.V., Ostroumova, E.V., Rogachev, A.A. and Shulekin, A.F., Pis'ma v Zh. Tekh. Fiz. 17, 44 (1991). [Sov. Tech. Phys. Lett. 17 (7), 476 (1991)].Google Scholar
6. Ostroumova, E.V. and Rogachev, A.A., Fiz. Tech. Poluprovodn. 28, 1411 (1994) [Semiconductors 28 (8), 793 (1994)]Google Scholar
7. Deck, T., Kalganov, V.D., Mileshkina, N.V., Moscardini, A. and Ostroumova, E.V., Physics of Low-Dimensional Structures 11/12, 147 (2000).Google Scholar
8. Kalganov, V.D., Mileshkina, N.V., Ostroumova, E.V. in Proc. 10th Int. Symp. Nanostructures: Physics and Technology, (St. Petersburg, 2002), p. 357–360.Google Scholar