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Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure

Published online by Cambridge University Press:  31 March 2014

Yuda Wang
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Parveen Kumar
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Leigh Morris Smith
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Jan M. Yarrison-Rice
Affiliation:
Department of Physics, Miami University, Oxford, Ohio, USA
Craig Pryor
Affiliation:
Department of Physics, University of Iowa, Iowa City, Iowa, USA
Jung-Hyun Kang
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Qiang Gao
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Hark Hoe Tan
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Chennupati Jagadish
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
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Abstract

We use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Montazeri, M., Fickenscher, M., Smith, L. M., Jackson, H. E., Yarrison-Rice, J., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y., Zou, J., Pistol, M. E. and Pryor, C. E., Nano Lett. 10, 880 (2010).CrossRefGoogle Scholar
Cerdeira, F., Buchenauer, C. J., Pollak, F. H. and Cardona, M., Phys. Rev. B, 5, 580 (1972)CrossRefGoogle Scholar
Borgström, M. T., Verheijen, M. A., Immink, G., Smet, T. D. and Bakkers, E. P., Nanotechnology. 17, 4010 (2006).CrossRefGoogle Scholar
Verheijen, M. A., Immink, G., Smet, T. D., Borgström, M.T. and Bakkers, E. P., J. Am. Chem. Soc. 128, 1353 (2006).CrossRefGoogle Scholar
Pistol, M. E. and Pryor, C. E., Phys. Rev. B 80, 035316 (2009).CrossRefGoogle Scholar
Pryor, C. E. (private communication) Google Scholar
Popovitz-Biro, R., Kretinin, A., Huth, P. V. and Shtrikman, H., Cryst. Growth Des. 11, 3858 (2011).CrossRefGoogle Scholar
Salehzadeh, O., Kavanagh, K. L. and Watkins, S. P., J. Appl. Phys. 113, 134309 (2013).CrossRefGoogle Scholar