Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T15:25:02.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Tunable Thin Film Integrated Material Characterizations for Microwave Applications

Published online by Cambridge University Press:  01 February 2011

Mahmoud Al Ahmad ,
Sandrine Payan ,
Dominique Michau ,
Mario Maglione  and
Robert Plana
Mahmoud Al Ahmad
Affiliation:
[email protected], LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, N/A, France
Sandrine Payan
Affiliation:
Université de Bordeaux, ICMCB CNRS, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Dominique Michau
Affiliation:
Université de Bordeaux, ICMCB CNRS, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Mario Maglione
Affiliation:
[email protected], ICMCB CNRS, Université de Bordeaux, 87 Av Dr Schweitzer, Pessac Cedex, 33608, France
Robert Plana
Affiliation:
LAAS CNRS, 7 avenue du Colonel Roche, Toulouse Cedex 4, France
Get access

Abstract

In this work, a simple, fast and repeatable technique is proposed for tunable integrated thin film material characterizations. The technique does not depend on the type of material development method or special thin film processing. Moreover, additional structures or calibrations are not required. The proposed method can be used to determine the loss of a thin film material using radio frequency capacitance measurements in both parallel plate and interdigital topologies. An analytical formulation is given for the computation of the film loss based on its measured input impedance which is extracted from the measured scattering parameters. This technique is used for barium strontium titanate (BST) thin film material characterizations.

Keywords

thin filmmicrowave heatingcrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J02-07
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jamil, A. Kalkur, T. S. Cramer, N. “Tunable Ferroelectric Capacitor-Based Voltage-Controlled Oscillator,” IEEE Trans. Ultrasonics Ferroelectrics and Frequency Control, vol. 54, no. 2, pp. 222–226, Feb. 2007.Google Scholar
[2] Victor, A. Nath, J. Ghosh, D. Boyette, B. Maria, J.-P., Steer, M. B. Kingon, A. I. Stauf, G. T. “A voltage controlled oscillator using barium strontium titanate (BST) thin lm varactor,” in IEEE Radio and Wireless Conference, 2004, pp. 91–94.Google Scholar
[3] Al-Ahmad, M., Loyez, C. Rolland, N. and Rolland, P.-A., “Wide BST-Based Tuning of Voltage Controlled Oscillator,” Asia-Pacific Microwave Conference (APMC 2006), 2006.Google Scholar
[4] Tombak, A. Maria, J.-P., Ayguavives, F. T. Zhang, Jin, Stauf, G. T. Kingon, A. I. Mortazawi, A. “Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors,” IEEE Trans. Microwave Theory and Tech., vol. 51, no. 2, part 1, pp. 462–467, Feb. 2003.Google Scholar
[5] Papapolymerou, J. Lugo, C. Zhiyong, Zhao, Xiaoyan, Wang, Hunt, A. “A Miniature Low-Loss Slow-Wave Tunable Ferroelectric BandPass Filter From 11-14 GHz,” IEEE MTT-S International Microwave Symp. Dig., 2006, pp. 556–559.Google Scholar
[6] Erker, E. G. Niagra, A. S. Liu, Y. Periaswamy, P. Taylor, T. R. Speck, J. and York, R. A. “Monolithic Ka band phase shifter using voltage variable BaSrTiO3 parallel plate capacitor,” IEEE Microwave Guided Wave Lett., vol. 10, no. 1, pp.10–12, Jan. 2000.Google Scholar
[7] Kim, D. Choi, Y. Allen, M. G. Kenney, J. S. and Kiesling, D. “A Wide-band Reflection-type Phase Shifter at S-band Using BST Coated Substrate,” IEEE Trans. Microwave Theory Tech., vol. 50, no. 12, pp. 2903–2909, Dec. 2002.Google Scholar
[8] Chen, L.-Y. Vicki, Forse, R. Chase, D. and York, R. A. “Analog tunable matching network using integrated thin-film BST capacitors,” in IEEE MTT-S International Microwave Symp. Dig., vol. 1, 2004, pp. 261–264.Google Scholar
[9] Scheele, P. Goelden, F. Giere, A. Mueller, S. Jakoby, R. “Continuously tunable impedance matching network using ferroelectric varactors,” IEEE MTT-S International Microwave Symp. Dig., 2005, pp. 603–606.Google Scholar
[10] Rahman, M. Shamsaifar, K. “Electronically tunable LTCC based multi-layer filter for mobile handset application,” IEEE MTT-S International Microwave Symp. Dig., vol. 3, 2003, pp. 1767–1770.Google Scholar
[11] Jakoby, R. Scheele, P. Muller, S. Weil, C. “Nonlinear dielectrics for tunable microwave components,” 15th International Conference on Microwaves, Radar and Wireless Communications, vol. 2, 2004, pp. 369–378.Google Scholar
[12] Ahmad, M. Al, Brunet, M. Payan, S. Michau, D. Maglione, M. and Plana, R. “Wide-Tunable Low-Field Interdigitated Barium Strontium Titanate Capacitors,” IEEE Microwave and Wireless Components Lett., vol. 17, no. 11, pp. 769–771, Nov. 2007.Google Scholar
[13] Reymond, V. Michau, D. Payan, S. and Maglione, M. “Substantial reduction of the dielectric losses of Ba0.6Sr0.4TiO3 thin lms using a SiO2 barrier layer,” Journal of Physics: Condensed Matter, vol. 16, no. 50, pp.: 9155–9162, 2004.Google Scholar
[14] Pzar, David M., Microwave Engineering, 2nd edition; N. Y.: John Wiley and Sons, Inc., 1998.Google Scholar
[15] Zhang, Jin, Tombak, A. Maria, J.-P., Boyette, B. Stauf, G. T. Kingon, A. I. Mortazawi, A. “Microwave characterization of thin lm BST material using a simple measurement technique,” IEEE MTT-S International Microwave Symp. Dig., vol. 2, pp. 1201–1204, 2002.Google Scholar