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Tunable Diode Laser Absorption Spectroscopy of the Pyrolysis of Methylsilazane

Published online by Cambridge University Press:  15 February 2011

H. C. Sun ,
Y. W. Bae ,
E. A. Whittaker  and
B. Gallois
H. C. Sun
Affiliation:
Department of Physics and Engineering Physics
Y. W. Bae
Affiliation:
Department of Materials Science and EngineeringStevens Institute of Technology, Hoboken, NJ 07030
E. A. Whittaker
Affiliation:
Department of Physics and Engineering Physics
B. Gallois
Affiliation:
Department of Physics and Engineering Physics
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Abstract

An understanding of the chemical processes occurring in the gas phase during metalorganic chemical vapor deposition is needed to design novel precursors and for the subsequent control of the composition and the microstructure of the solid product. Tunable diode laser absorption spectroscopy provides a means to precisely monitor specific bond rupture in the precursor during pyrolysis. Methylsilazane [CH3SiHNH]n,, a precursor to silicon-based ceramic thin films, was used to investigate the potential of this technique. Below the decomposition temperature, the intensity of the absorption line at 871.6±0.1 cm−1 corresponding to one of the harmonics from Si-CH3, increased linearly with the vapor pressure of methylsilazane up to 800 Pa and then decreased exponentially. The typical linewidths of the absorption line was approximately 0.006 cm−;1, orders of magnitude narrower than would be observable using conventional infrared techniques. The absorption line was detectable over a pressure range from less than 1 Pa to 10 kPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 107
Copyright
Copyright © Materials Research Society 1992

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References

1. Girolami, G.S. and Gozum, J.E., in Chemical Vapor Deposition of Refractory Metals and Ceramics, (Proc. Mater. Res. Soc. Symp.), edited by Besmann, T.M. and Gallois, B.M. (Materials Research Society, Pittsburgh, PA, 1990), Vol.168, p. 319.Google Scholar
2. Pouskouleli, G., Ceram. Int. 15, 213 (1989).CrossRefGoogle Scholar
3. Reid, J., El-Sherbiny, M., Garside, B.K.. and Ballik, E.A., Appl. Opt., 19, 3349 (1980).CrossRefGoogle Scholar
4. Wormhoudt, J., Stanton, A.C., Richards, A.D.. and Sawan, H.H., J. Appl. Phys., 61, 142 (1987).CrossRefGoogle Scholar
5. Sun, H.C. and Whittaker, E.A., IEEE LEOS'90 (Conference Proceeding), p. 577 (1990).Google Scholar
6. Sun, H.C. and Whittaker, E.A., Appl. Opt., to be published.Google Scholar
7. Du, H., Gallois, B.. and Gonsalves, K.E., J. Am. Ceram. Soc. 73 (3), 764 (1990).CrossRefGoogle Scholar
8. Du, H., Gallois, B.. and Gonsalves, K.E., Chem. Mater. 1 (6), 569 (1989).CrossRefGoogle Scholar
9. Du, H., Bae, Y.W., Gallois, B.. and Gonsalves, K.E., in Chemical Vapor Deposition of Refractory Metals and Ceramics, (Proc. Mater. Res. Soc. Symp.), edited by Besmann, T.M. and Gallois, B. (Materials Research Society, Pittsburgh, PA, 1990), Vol. 168, p. 331.Google Scholar
10. Bae, Y.W., Wilkens, B.J., Du, H., Gonsalves, K.E.. and Gallois, B., Proc. 2nd Int. Conf. Electron. Mater., (Materials Research Society, Pittsburgh, PA, 1990) (in press).Google Scholar
11. Seyferth, D., Wiseman, G.H.. and Prud'Homme, C., J. Am. Ceram. Soc. 66 (1), c–13 (1983).CrossRefGoogle Scholar
12. Seyferth, D. and Wiseman, G.H., Ultrastructure Processing of Ceramics, Glasses, and Composites, edited by Hench, L.L. and Ulrich, D.R. (John Wiley & Sons, New York, 1984), p. 265.Google Scholar
13. Ghertz, M., Bjorklund, G.C.. and Whittaker, E.A., J. Opt. Soc. Am. B, 2, 1510 (1985).CrossRefGoogle Scholar
14. Carlisle, C.B., Cooper, D.E.. and Preier, H., Appl. Opt., 28, 2567 (1989).CrossRefGoogle Scholar
15. Werle, P., Slemr, F., Ghertz, M.. and Brauchle, C., Appl. Phys. B, 49, 99 (1989).CrossRefGoogle Scholar
16. Anderson, D.R., Analysis of Silicones, edited by Smith, A.L., (John Wiley & Sons, New York, 1974), p. 261.Google Scholar