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Tunable Dielectric and Piezoelectric Characteristics of Lead Magnesium Niobate Titanate Relaxor Thin Films

Published online by Cambridge University Press:  21 February 2011

J. Chen ,
Q. Zhang  and
L.E. Cross
J. Chen
Affiliation:
Materials Research LaboratoryThe Pennsylvania State University University Park, PA 16802
Q. Zhang
Affiliation:
Materials Research LaboratoryThe Pennsylvania State University University Park, PA 16802
L.E. Cross
Affiliation:
Materials Research LaboratoryThe Pennsylvania State University University Park, PA 16802
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Abstract

Ferroelectric relaxor thin films Pb[(Mg1/3Nb2/3)0.9Ti0.1]O3 (90PMNIOPT) have been fabricated by the sol-gel technique. The dielectric, piezoelectric and electrostrictive characteristics have been investigated. Experimental results show that the dielectric permittivity and effective piezoelectric coefficients of the films can be tuned by varying dc bias fields which offers the useful features in designing smart micro transducer and actuator systems. Dielectric constants of the films are in the range of 5000 to 6000. The electric field induced strain is on the order of 10−3, and the maximum effective d33 coefficient of 90PMINI0PT films is as large as 265 pC/N at 31 kV/cm. The electrostrictive coefficient Q11 is on the order of 1.2 c×10−2 m4/C2 and M11 is 3.5 c×10−16 m2/V2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 47
Copyright
Copyright © Materials Research Society 1993

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References

1. Udayakumar, K.R., Chen, J., Brooks, Keith G. and Cross, L.E. in Ferroelectric Thin Films II, eds. by Kingon, A.I. and Myers, E.R.,(Mater.Res.Soc.Proc. 243, Pittsburgh, PA,1991) pp.49 Google Scholar
2. Tjhen, W., Tamagawa, T., Ye, C. P., Hsueh, C.C., Schiller, P., and Polla, D.L., Proc. IEEEMicro Electro Mechanical Systems Workshop, 114(1991)Google Scholar
3. Nomura, Shoichiro and Uchino, Kenji, Ferroelectrics, 41, 117(1982)Google Scholar
4. Jang, S.J., Uchino, K., Nomura, S., and Cross, L.E., Ferroelectrics 27, 31(1980)Google Scholar
5. Swartz, S. L. and Shrout, T.R., Mater. Res. Bull. 17, 1245(1982)Google Scholar
6. Pan, W.Y., Gu, W.Y., Taylor, D.J. and Cross, L.E., Jpn. J. Appl. Phys. 28(4), 653(1989)Google Scholar
7. Nomura, Shoichiro and Uchino, Kenji, Ferroelectrics, 50, 197, (1983).CrossRefGoogle Scholar
8. Francis, L.F., Oh, Y. J., and Payne, D. A., J. Mater. Sci. 25, 5007, (1990).CrossRefGoogle Scholar
9. Okuwada, K., Imai, M. and Kakuno, K., Jpn. J. Appl. Phys. 28, L1271(1989).Google Scholar
10. Francis, L.F. and Paynein, D.A. Ferroelectric Thin Films, eds. by Kingon, A.I. and Myers, E.R., (Mater.Res.Soc.Proc. 200, Pittsburgh, PA, 1990) pp. 149 Google Scholar
11. Udayakumar, K.R., Chen, J., Schuele, P.J., Kumar, V., Krupanidhi, S. B. and Cross, L.E., Appi.Phys.Lett. 60(10), 1187(1992)Google Scholar
12. Zhang, Q., W.Pan, and Cross, L.E., J. Appl. Phys. 63, 2490 (1988)Google Scholar
13. Zhang, Q., Pan, W., Bhalla, A., and Cross, L.E., J. Am. Ceram. Soc., 72 [4] 599, (1989)CrossRefGoogle Scholar
14. Chen, J., and Cross, L. E., to be submittedGoogle Scholar