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True Atomic Resolution Imaging on Semiconductor Surfaces with Noncontact Atomic Force Microscopy

Published online by Cambridge University Press:  15 February 2011

Y. Sugawara ,
H. Ueyama ,
T. Uchihashi ,
M. Ohta ,
Y. Yanase ,
T. Shigematsu ,
M. Suzuki  and
S. Morita
Y. Sugawara
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita 565, Japan, [email protected]
H. Ueyama
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita 565, Japan, [email protected]
T. Uchihashi
Affiliation:
Department of Physics, Faculty of Science, Hiroshima University, 1–3–1 Kagamiyama, Higashi- Hiroshima 739, Japan
M. Ohta
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita 565, Japan, [email protected]
Y. Yanase
Affiliation:
Sumitomo Sitix Co. Ltd., 2201 Kamioda, Kohoku, Kashima 849–05, Japan
T. Shigematsu
Affiliation:
Sumitomo Sitix Co. Ltd., 2201 Kamioda, Kohoku, Kashima 849–05, Japan
M. Suzuki
Affiliation:
NTT Advanced Technology Co. Ltd., 3–1 Wakamiya, Morinosato, Atsugi 243–01, Japan
S. Morita
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita 565, Japan, [email protected]
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Abstract

The constant vibration mode and the constant excitation mode in noncontact atomic force microscopy were compared to investigate the force interaction between tip and surface. As a result, we found that the constant excitation mode is much more gentle than the constant vibration mode. We also succeeded in atomic resolution imaging on InP(110) surface not only in the noncontact region but in the contact region for the first time. Furthermore, we found the discontinuity of the force gradient curve on reactive Si(111)7×7 reconstructed surface. We proposed a model to explain the discontinuity with the crossover between the physical and chemical bonding interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 15
Copyright
Copyright © Materials Research Society 1997

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