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True Atomic Level Imaging of Shaped Nanoparticles Composed of Bismuth, Antimony and Tellurium using Scanning Transmission Electron Microscopy.

Published online by Cambridge University Press:  13 September 2011

Derrick Mott
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Nguyen T. Mai
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Teruyoshi Sakata
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Mikio Koyano
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Koichi Higashimine
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Shinya Maenosono
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Abstract

Nanotechnology is an area of research that is highly intriguing because of the novel properties often observed for materials whose sizes are reduced to the nanoscale. However, one of the biggest challenges is understanding the underlying principles that dictate the particles resulting properties. The atomic level structure for nanoparticles is suspected to vary from that for the corresponding bulk materials, however, direct observation of this phenomenon has proven difficult. Until recently only indirect information on the atomic level structure of such materials could be obtained with techniques such as XRD, HR-TEM, XPS, etc… However, recent advances in Transmission Electron Microscopy techniques now allow true atomic scale resolution, leading to definitive confirmation of the atomic structure. Namely, Scanning Transmission Electron Microscopy coupled with a High-angle Annular Dark Field detector (STEM-HAADF) has been demonstrated to be capable of achieving a nominal resolution of 0.8 nm (the JEOL JEM-ARM200F instrument). The ability is highly exciting because it will lead to an enhanced understanding of the relationship between atomic structure of nanoparticles and the resulting novel properties. In our own study, we focus on the analysis of the atomic level structure for nanoparticles composed of bismuth, antimony and tellurium for thermoelectric materials. This area has recently received much interest because of the realization that nanotechnology can be employed to greatly enhance the efficiency (dimensionless figure of merit ZT) of this class of materials. One of the most intriguing parameters leading to the enhanced TE activity is the relationship between composition and structure that exists within individual nanoparticles. We report our results on a study of the atomic level structure for both nanowires and nanodiscs composed of bismuth, antimony and tellurium. It was found that the nanoparticles have a complex structure that cannot be elucidated by conventional techniques such as XRD or HR-TEM. In addition, by employing Energy Dispersive Spectroscopy (EDS), a greater understanding of the composition-structure dependence was gained. The results are primarily discussed in terms of the atomic level resolution images obtained with the STEM-HAADF technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Van Aert, S., Batenburg, K. J., Rossell, M. D., Erni, R. and Van Tendeloo, G., Nature 470, 374 (2011).Google Scholar
2. Mayoral, A., Mejía-Rosales, S., Mariscal, M. M., Pérez-Tijerina, E. and José-Yacamán, M., Nanoscale 2, 2647 (2010).Google Scholar
3. Poudel, B., Hao, Q., Ma, Y., Lan, Y., Minnich, A., Yu, B., Yan, X., Wang, D., Muto, A., Vashaee, D., Chen, X., Liu, J., Dresselhaus, M. S., Chen, G. and Ren, Z., Science 320, 634 (2008).Google Scholar
4. Purkayastha, A., Yan, Q., Raghuveer, M. S., Gandhi, D. D., Li, H., Liu, Z. W., Ramanujan, R. V., Borca-Tasiuc, T. and Ramanath, G., Advanced Materials 20, 2679 (2008).Google Scholar
5. Mott, D., Mai, N. T., Thuy, N. T. B., Maeda, Y., Linh, T. P. T., Koyano, M. and Maenosono, S., Physica Status Solidi A 208, 52 (2011).Google Scholar
6. Reference data taken from the International Centre for Diffraction Data, PDF card numbers; Tellurium: 00-036-1452, Bi2Te3: 01-089-2009, Sb2Te3: 00-015-0874, and (Bi0.5Sb0.5)2Te3: 01-072-1835.Google Scholar