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Triple Junction Engineering: the Distribution of Triple Junctions in Polycrystalline Gold Thin Films

Published online by Cambridge University Press:  10 February 2011

Kwame Owusu-Boahen  and
Alexander H. King
Kwame Owusu-Boahen
Affiliation:
Department of Materials Science and Engineering, SUNY Stony Brook, NY 11794–2275.
Alexander H. King
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907–1289.
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Abstract

We have investigated compliance with the σ-product rule at triple junctions with a common [111] axis using computer simulations and in real thin films, using electron microscopy. Large discrepancies exist between the simulations, which assume randomly distributed misorientations, and the experiments. Although for both cases the rule fails at most triple junctions, the real material shows a much higher than expected occurrences of compliance. This result can be explained in two distinct ways: first, there might be a preference for triple junctions that obey the rule (implying a distinct influence of the triple junction itself). Alternatively, the misorientations in the real crystal might not be randomly distributed: if there is a preference for boundaries that have only small deviations from coincidence, there will be an increase in the compliance with the rule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 586: Symposium M – Interfacial Engineering for Optimized Properties II , 1999 , 117
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Fortier, P., Miller, W A. and Aust, T., Acta Mater., 45, (1997) 3459–3467.Google Scholar
2. Harris, K.E, Singh, V.V. and King, A.H., Acta Mater. 46, (1998) 2623–2633.Google Scholar
3. Singh, V.V. and King, A.H., J. of Electronic Mater., 26, (1997) 987–995.Google Scholar
4. Gertsman, V.Y. and Tangri, K., Scripta Metall. et Mater. 32 (1995) 1649–1652.Google Scholar
5. Brandon, D.G., Acta. Metall., 14, 1479 (1966).Google Scholar
6. Owusu-Boahen, K. and King, A.H., Scripta Mater. 42, 301 (2000).Google Scholar
7. Clarebrough, L.M. and Forwood, C.T., Philos. Mag. A 55 (1987) 217–225.Google Scholar
8. Dimitrakopoulos, G.P., Karakostas, Th. and Pond, R.C., in Interface Science and Materials Interconnections, Proceedings of JIMIS-8 (1996) 347.Google Scholar
9. King, A.H., Mater. Sci. Forum 294–296 (1999) 91–94.Google Scholar