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Trends of Research in Active Addressing of LCDS

Published online by Cambridge University Press:  15 February 2011

Ernst Lueder
Ernst Lueder*
Affiliation:
Universitaet Stuttgart, Institut fuer Netzwerk- und Systemtheorie, Pfaffenwaldring 47, D-70550 Stuttgart, Germany
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Abstract

Active addressing is focused on TFTs and MIMs as pixel-switches. The manufacture of a-Si-TFTs tends to settle down at a three-mask process as long as risky steps can be avoided. Fabrication throughput is being enhanced by increasing the deposition rate for a-Si- and poly-Si-layers processed by PECV.D. For wider process windows and for building row drivers with a-Si-TFTs effective mobility will have to be increased beyond 1 cm2/Vs especially by new TFT-electrodes, a protective sandwich around the a-Si-layer and modified process techniques. Poly-Si-TFTs should be fabricated at temperatures below 450 °C and preferably without laser annealing before they become an economic solution. MIMs still require more materials research to find a dielectric with a larger trap density enhancing speed of operation, lower addressing voltages and electrodes for improved long-term stability. Low-temperature processes are required for LCDs with plastic substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 847
Copyright
Copyright © Materials Research Society 1995

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