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Traps at the SiC/SiO2-Interface

Published online by Cambridge University Press:  21 March 2011

Gerhard Pensl ,
Michael Bassler ,
Florin Ciobanu ,
Valeri Afanas'ev ,
Hiroshi Yano ,
Tsunenobu Kimoto  and
Hiroyuki Matsunami
Gerhard Pensl
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Michael Bassler
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Florin Ciobanu
Affiliation:
Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany.
Valeri Afanas'ev
Affiliation:
Laboratory for Semiconductor Physics, University of Leuven, B-3001 Leuven, Belgium.
Hiroshi Yano
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
Tsunenobu Kimoto
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
Hiroyuki Matsunami
Affiliation:
Department Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan.
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Abstract

The density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H3.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Jorgensen, P. J., Wadsworth, M. E. and Cutler, I. B., Proceedings of the Coference on Silicon Carbide, Boston, MA, eds.: O'Connor, J. R. and Smiltens, J., p. 241 (1960).Google Scholar
2. Costello, J. A. and Tressler, R. E., J. Am. Ceram. Soc. 69, 674 (1986).Google Scholar
3. Pensl, G., Afanas'ev, V. V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., Strunk, H.P., Maier, M. and Choyke, W. J., Inst. Phys. Conf. Ser. 142, 275 (1996).Google Scholar
4. Afanas'ev, V. V., Bassler, M., Pensl, G., Schulz, M. and Stein von Kamienski, E., J. Appl. Phys. 79, 3108 (1996).Google Scholar
5. Bassler, M., Pensl, G. and Afanas'ev, V., Diamond and Rel. Mater. 6, 1472 (1997)Google Scholar
6. Afanas'ev, V. V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M. J. and Harris, C. I., Appl. Phys. Lett. 68, 2141 (1996).Google Scholar
7. Afanas'ev, V. V., Bassler, M., Pensl, G. and Schulz, M., phys. stat. sol. (a) 162, 321 (1997)Google Scholar
8. Das, M. K., Um, B. S: and Cooper, J. A., Mater. Sci. Forum 338–342, 1069 (2000).Google Scholar
9. Schörner, R., Friedrichs, P., Peters, D. and Stephani, D., IEEE Electron Device Lett. 20, 241 (1999).Google Scholar
10. Yano, H., Kimoto, T., Matsunami, H., Bassler, M., and Pensl, G., Mater. Sci. Forum 338‐342, 1109 (2000).Google Scholar
11. Afanas'ev, V. V. and Stesmans, A., J. Phys.: Condensed Matter 9, 155 (1997).Google Scholar
12. Hornetz, B., Michel, H.-J., Halbritter, J., J. Mater. Res. 9, 3088 (1994).Google Scholar
13. Chang, K. C., Nuhfer, N. T., Porter, L. M. and Wahab, Q., Appl. Phys. Lett. 77, 2186 (2000).Google Scholar
14. Sofield, C. J. and Stoneham, A. M., Semicond. Sci. Technol. 10, 215 (1995).Google Scholar
15. Ong, C. K., Harker, A. H. and Stoneham, A. M., Interface Sci. 1, 139 (1993).Google Scholar
16. Helms, C. R. and Poindexter, E. H., Rep. Prog. Phys. 57, 791 (1994).Google Scholar
17. Brower, K. L., Phys. Rev. B 42, 3444 (1990).Google Scholar
18. Edwards, A. H. and Fowler, W. B., 27th IEEE Semiconductor Interface Specialists Conference, San Diego, Abstract No. 2.4 (1996).Google Scholar
19. Fukuda, K., Suzuki, S., Tanaka, T. and Arai, K., Appl. Phys. Lett. 76, 1585 (2000).Google Scholar
20. Macfarlane, P. J. and Zvanut, M. E., J. Appl. Phys. 88, 4122 (2000).Google Scholar
21. Tabbal, M., Isber, S., Christidis, T. C., Khakani, M. A. and Chaker, M., J. Appl. Phys. 88, 5127 (2000).Google Scholar
22. Bassler, M., Afanas'ev, V.V., Pensl, G. and Schulz, M., Mater. Sci. Forum 338–342, 1065 (2000).Google Scholar
23. Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K. and Sugawara, Y., IEEE Electron Device Lett. 20, 611 (1999).Google Scholar
24. Yano, H., Kimoto, T., and Matsunami, H., Mater. Sci. Forum 353–356, 627 (2001).Google Scholar