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Trapping of Hydrogen in Carbon Nitride Films During or After High Temperature Heat Treatment

Published online by Cambridge University Press:  01 February 2011

David C. Ingram ,
Asghar Kayani ,
William C. Lanter  and
Charles A. DeJoseph
David C. Ingram
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH, USA.
Asghar Kayani
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH, USA.
William C. Lanter
Affiliation:
Innovative Scientific Solutions, Corp., Beavercreek, OH, USA.
Charles A. DeJoseph
Affiliation:
Air Force Research Laboratory (AFRL/PRPE), Wright-Patterson AFB, Dayton, OH, USA.
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Abstract

Thin films of carbon nitride deposited by ion beam assisted deposition or by magnetron sputter deposition typically contain a significant fraction of hydrogen, 1–30 atomic percent (at.%). In order to improve the thermal stability of the properties of the films, attempts have been made to minimize the hydrogen trapped during deposition. Such films typically have less than 5 at.% hydrogen. On heating these films in ultra high purity (99.999%) argon, it has been found that above 600°C they start to absorb significant amounts of hydrogen, this despite retaining their mechanical integrity. The composition of the films is determined using Rutherford Backscattering Spectroscopy in combination with Elastic Recoil Spectroscopy for detecting the hydrogen isotopes. In this paper, the possible sources of the hydrogen have been investigated by exposing the samples to deuterated water or deuterium gas during or immediately after the heat treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U8.4
Copyright
Copyright © Materials Research Society 2005

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References

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