Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:56:30.102Z Has data issue: false hasContentIssue false
  • English
  • Français

Trapping Dynamics And Charged Defects: Light Induced Studies in a-Si:H and a-Si1-xGe:H

Published online by Cambridge University Press:  01 January 1993

J. Hautala  and
J.D. Cohen
J. Hautala
Affiliation:
University of Oregon, Department of Physics Eugene, OR 97403
J.D. Cohen
Affiliation:
University of Oregon, Department of Physics Eugene, OR 97403
Get access

Abstract

Bandtail defect carrier trapping dynamics in high quality photo-CVD grown a-Si1-xGex:H (x=0.3 and 0.62) and PECVD deposited a-Si:H films were studied using photo-modulated electron spin resonance (PMESR). Comparison of the dark spin densities with junction capacitance (drive-level profiling) methods indicate that a majority of the defects are neutral in the a-Si:H and 30% Ge samples, but the majority of the defects in the 62% Ge sample are charged. Lineshape deconvolution of the PMESR signals in the in-phase and quadrature phase as a function of photo-modulation frequency, excitation energy and excitation intensity for both intrinsic (state A) and light soaked (state B) states revealed three significant insights: in state A all samples behave similarly, state B behavior of the a-Si:H is dramatically different from the state B alloyed samples, and strong evidence for 'safe hole traps' (SHT) is observed in the state B a-Si:H material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 667
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kumeda, M., Jinno, Y. and Shimizu, T., Phys. Status Solidi (B) 81, K71 (1977).Google Scholar
2. Stutzmann, M., Nemanich, R.J. and J. Stuke, Phys. Rev. B 30, 3595 (1984).Google Scholar
3.M. Stutzmann, R.A. Street, C.C. Tsai, J.B. Boyce and S.E. Ready, J. Appl. Phys., 66, No.2, 569 (1989).Google Scholar
4. Essick, J.M. and Cohen, J.D., Phys. Rev. Lett. 64, 3062 (1990).Google Scholar
5.J.D. Cohen, T. Leen and R. J. Rasmussen, Phys. Rev. Lett., 69, 3358 (1992).Google Scholar
6. Hautala, J., Unold, T. and Cohen, J.D., published in this volumeGoogle Scholar
7. Street, R.A., Biegelsen, D.K. and Knights, J.C., Phys. Rev. B. 24, 969 (1980).Google Scholar
8. Ristein, J., Hautala, J. and Taylor, P.C., Phys. Rev. B. 40, 88 (1989).Google Scholar
9. Hautala, J., Ristein, J. and Taylor, P.C., in Proc. International Meeting on Stability of Amorphous Silicon Materials and Solar Cells: AIP (1991).Google Scholar
10. Saleh, Z.M., Tarui, H., Tsuda, S., Nakano, S. and Kuwano, Y., Proceedings of the MRS Spring Meeting (1992)Google Scholar
11.T. Unold, Ph.D. Thesis, Univ. of Oregon, (1993).Google Scholar
12.Microprobe analysis was perfomed at NREL by Alice Mason.Google Scholar
13. Aljishi, S., Smith, Z.E. and Wagner, S., Amorphous Silicon and Related Materials, ed. Helmut Fritzsche, World Scientific Pub., 897 (1988).Google Scholar
14. Hegedus, S. S. and Fagen, E.A., J. Appl. Phys. 71, 5941 (1992).Google Scholar
15. Stutzman, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B. 32, 23 (1985).Google Scholar
16. Miyanishi, A., Nakata, J., Imao, S., Shirafuji, J., Kubo, U. and Inuishi, Y., Jpn. J. Appl. Phys., 30, 243 (1991).Google Scholar
17. McMahon, T. J. and Crandall, R.S., Phys. Rev. B, 39, 1766 (1989).Google Scholar
18. McMahon, T. J. and Crandall, R.S., Phil. Mag. B, 61, 425 (1990).Google Scholar
19. Nitta, Y., Abe, K., Hattori, K., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids, 97&98, 695 (1987).Google Scholar