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Transport Studies on Two-subband-populated AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  11 February 2011

D. R. Hang ,
C. F. Huang ,
Y. F. Chen  and
B. Shen
D. R. Hang
Affiliation:
Department of Physics, National Taiwan University, Taipei, Taiwan, 106 Republic of China
C. F. Huang
Affiliation:
Department of Physics, National Taiwan University, Taipei, Taiwan, 106 Republic of China
Y. F. Chen
Affiliation:
Department of Physics, National Taiwan University, Taipei, Taiwan, 106 Republic of China
B. Shen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China.
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Abstract

We report an investigation of electronic properties of two-dimensional electron gas (2DEG) confined at AlGaN/GaN heterostructures by magnetotransport measurements. The second-subband population is manifested by the multi-frequency in the Shubnikov-de Haas (SdH) oscillations. The modulated patterns of SdH oscillations which are due to the two-subband occupancy can be drastically enhanced by employing the microwave modulation technique. This unique advantage enables us to provide direct experimental evidence that the 2DEG in the second subband has a higher mobility than that in the first subband in the modulation-doped Al0.22Ga0.78N/GaN heterostructures by means of microwave-modulated magnetotransport measurements. The carrier concentrations and 2DEG Fermi energy for each subband were determined. It was found that the second-subband population ratio increases with spacer thickness up to 5 nm, while the subband separation decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.47
Copyright
Copyright © Materials Research Society 2003

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References

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