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The Transport Properties and Defect Chemistry of La2-XSrXCuO4-δ

Published online by Cambridge University Press:  28 February 2011

Ming-Jinn Tsai ,
Elizabeth J. Opila  and
Harry L. Tuller
Ming-Jinn Tsai
Affiliation:
Crystal Physics & Optical Electronics Laboratory Department of Materials Science & Engineering Massachusetts Institute of Technology Cambridge, MA 01239
Elizabeth J. Opila
Affiliation:
Crystal Physics & Optical Electronics Laboratory Department of Materials Science & Engineering Massachusetts Institute of Technology Cambridge, MA 01239
Harry L. Tuller
Affiliation:
Crystal Physics & Optical Electronics Laboratory Department of Materials Science & Engineering Massachusetts Institute of Technology Cambridge, MA 01239
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Abstract

La2‐xSrxCuO4‐δ has been studied to determine the role of dopants and oxygen stoichiometry on the transport properties and defect chemistry of this system. The conductivity was found to reach a maximum for 0.2 < x < 0.3 which reflects a change from electronic to ionic compensation of the Sr dopant at large values of x. A metal to semiconductor transition is observed for x > 0.6 for temperatures below ∼ 600°C. However, the source of this behavior is not clear, given that an increasing amount of second phase was observed for x > 0.4. The conductivity and thermoelectric power (TEP) of La2CuO4 show a Po2 ⅙ dependence and a temperature independence, implying that the hole mobility is not thermally activated and the enthalpy of oxidation is nearly zero. This last conclusion is confirmed by TGA data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 65
Copyright
Copyright © Materials Research Society 1990

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References

1;Ganguly, P. and Rao, C.N.R., Mat. Res. Bull. 8 405 (1973).Google Scholar
2;Goodenough, J.B., Mat. Res. Bull. 8 423 (1973).Google Scholar
3;Goodenough, J.B.,Demazeau, G., Pouchard, M., and Hagen‐muller, P., J. Solid State Chem. 8 325 (1973).Google Scholar
4;Nguyen, N., Er‐Rakho, L., Michel, C., Choisnet, J., and Raveau, B., Mater. Res. Bull. 15 791 (1980).Google Scholar
5;Nguyen, N., Choisnet, J., Hervieu, M., and Raveau, B., J. Solid State Chem. 39 120 (1981).Google Scholar
6;Nguyen, N., Studer, F., and Raveau, B., J. Phys. Chem. Solids, 44 389 (1983).Google Scholar
7;Michel, C. and Raveau, B., Revue Chimie Minerale, 20 407 (1984).Google Scholar
8;Choi, G.M., Tuller, H.L., Tsai, M.J., MRS Proc. Vol. 99, Eds. M.W. Brodsky, R.C. Dynes, K. Kitizawa, and H.L. Tuller, , MRS, Pittsburgh, PA (1988), p. 141.Google Scholar
9;Pechini, M.P., U.S. Patent 3,330,697 (1967).Google Scholar
10;e.g., Choi, G.M. and Tuller, H.L., J. Am. Ceram. Soc., 71 201 (1988).Google Scholar
11;Singh, K.K., Ganguly, P., and Goodenough, J.B., J. Solid State Chem. 52 254 (1984).Google Scholar
12;Tsai, M.J. and Tuller, H.L., unpublished results.Google Scholar