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Transport Modeling and Compensation Mechanism for Semi-Insulating LT-Gaas and InP: Cu

Published online by Cambridge University Press:  15 February 2011

K. Xie  and
C. R. Wie
K. Xie
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo Buffalo, New York 14260
C. R. Wie
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo Buffalo, New York 14260
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Abstract

The compensation mechanism and transport properties of annealed GaAs grown by molecular beam epitaxy at low substrate temperature (LT-GaAs) and Cu diffused InP are analyzed by using a deep donor band model and a precipitate model. It was found that the compensation in highly resistive LT GaAs can not be explained by the precipitate model alone, and therefore a high donor density had to be considered. In Cu diffused InP, the precipitate model gives a consistent explanation for the observed carrier compensation and mobility data. For both semi-insulating LT-GaAs and fully-compensated, lightly-doped InP:Cu, the neutral impurity scattering was found to be a major carrier scattering mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

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