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“Transport limiting mechanisms of amorphous (a-Si:H) and microcrystalline(mc-Si:H) thin film heterostructures for photovoltaic application”

Published online by Cambridge University Press:  01 February 2011

Shahrukh A. Khan  and
W.A. Anderson
Shahrukh A. Khan
Affiliation:
University at Buffalo, Electrical Engineering, Buffalo, NY 14260.
W.A. Anderson
Affiliation:
University at Buffalo, Electrical Engineering, Buffalo, NY 14260.
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Abstract

Direct conversion of sunlight into electricity employing amorphous (a-Si:H) and microcrystalline (mc-Si) silicon solar cell structures provides cheap, continuous, large-area device capability. However, the inherent instability due to light induced degradation of such cells poses a challenge for practical photovoltaic applications. To work around this problem, we have made use of a-Si:H/c-Si (crystalline) and mc-Si/c-Si heterostructures. Plasma decomposition of 2% silane gas (SiH4/He) in an ECR (electron cyclotron resonance)-CVD configuration forms the basis of the deposition technique. Electro-optical properties exhibit photoconductivity (σp) of 6.5×10−6 S/cm and a low dark conductivity (σd) of 1.4×10−9 S/cm for a-Si:H films and a relatively high σp of 2.1×10−4 S/cm and a high σd of 1.2×10−7 S/cm for mc-Si films. A possible multi-tunneling transport mechanism is evident for a low forward bias with the current conduction becoming space charge limited with increasing bias. The domination of this latter mechanism may be responsible for non-ideal junction behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.3
Copyright
Copyright © Materials Research Society 2004

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References

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