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Transport and Meyer-Neldel Rule in Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Steve Reynolds ,
Vlad Smirnov ,
Friedhelm Finger ,
Charlie Main  and
Reinhard Carius
Steve Reynolds
Affiliation:
Forschungszentrum Jülich, Institute for Photovoltaics, D-52425 Julich, Germany.
Vlad Smirnov
Affiliation:
School of Computing and Creative Technologies, University of Abertay Dundee, Bell Street, Dundee DD1 1HG, U.K.
Friedhelm Finger
Affiliation:
Forschungszentrum Jülich, Institute for Photovoltaics, D-52425 Julich, Germany.
Charlie Main
Affiliation:
University of Dundee, Division of Electronic Engineering and Physics, Nethergate, Dundee DD1 4HN, U.K.
Reinhard Carius
Affiliation:
Forschungszentrum Jülich, Institute for Photovoltaics, D-52425 Julich, Germany.
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Abstract

Changes in the electrical conductivity of thin (< 300 nm) silicon films following prolonged exposure to atmosphere, are reported. Both reversible (by annealing at 150 °C under vacuum) and irreversible (annealing-resistant) effects are found to occur, which are larger in thinner films. The conductivity prefactor and thermal activation energy obey the Meyer-Neldel rule, although detailed behaviour depends on film thickness and microstructure. Irreversible changes may result from oxidation of thinner, more porous films, with water and/or oxygen adsorption and desorption responsible for reversible changes. The need to identify and account for these effects when discussing and formulating transport mechanisms in these materials is underlined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A5.6
Copyright
Copyright © Materials Research Society 2005

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References

[1] Tanielian, M., Phil. Mag. B 45, 435 (1982).10.1080/01418638208227449Google Scholar
[2] Vepřek, S., Iqbal, Z., Kühne, R.O., Capezzuto, P., Sarott, F A. and Gimzewski, J.K., J. Phys. C: Solid State Phys. 16, 6241 (1983).10.1088/0022-3719/16/32/015Google Scholar
[3] Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S. and Günes, M., IEE Proc. CDS 150, 300 (2003).Google Scholar
[4] Sendova-Vassileva, M., Finger, F., Klein, S. and Lambertz, A., J. Optoelectron. Adv. Mater. 7, 481 (2005).Google Scholar
[5] Smirnov, V., Reynolds, S., Main, C., Finger, F. and Carius, R., J. Non-Cryst. Solids, 338-340, 421 (2004).10.1016/j.jnoncrysol.2004.03.010Google Scholar
[6] Reynolds, S., Smirnov, V., Finger, F., Main, C. and Carius, R., J. Optoelectron. Adv. Mater. 7, 91 (2005).Google Scholar
[7] Goerlitzer, M., Torres, P., Beck, N., Wyrsch, N., Keppner, H., Pohl, J. and Shah, A., J. Non-Cryst. Solids 227-230, 996 (1998).10.1016/S0022-3093(98)00257-9Google Scholar
[8] Meier, J., Dubail, S., Cuperus, J., Kroll, U., Platz, R., Torres, P., Selvan, J.A. Anna, Pernet, P., Beck, N., Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Keppner, H. and Shah, A., J. Non-Cryst. Solids 227-230, 1250 (1998).10.1016/S0022-3093(98)00352-4Google Scholar
[9] Brüggemann, R., Rojahn, M. and Rösch, M., Phys. Stat. Sol. (a) 166, R11 (1998).10.1002/(SICI)1521-396X(199804)166:2<R11::AID-PSSA999911>3.0.CO;2-H3.0.CO;2-H>Google Scholar
[10] Ram, S., Kumar, S. and Cabarrocas, P. Röca i, Mater. Res. Soc. Symp. Proc. 715, A21.4 (2002).10.1557/PROC-715-A21.4Google Scholar
[11] Irsigler, P., Wagner, D. and Dunstan, D.J, J. Phys. C: Solid State Phys. 16, 6605 (1983).10.1088/0022-3719/16/34/010Google Scholar
[12] Overhof, H. and Thomas, P., Defect and Diffusion Forum 192-193, 1 (2001).10.4028/www.scientific.net/DDF.192-193.1Google Scholar
[13] Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Muck, A., Rech, B. and Wagner, H., Solar Energy Mater. & Solar Cells 62, 97 (2000).10.1016/S0927-0248(99)00140-3Google Scholar
[14] Tzolov, M., Finger, F., Carius, R. and Hapke, P., J. Appl. Phys. 81, 7376 (1997).10.1063/1.365354Google Scholar
[15] Fritzsche, H., “Electronic Properties of Surfaces in a-Si:H”, Semconductors and Semimetals 21C, ed. Pankove, J.I., (Academic, 1984), ch. 6, p309.Google Scholar
[16] Kocka, J., Fejfar, A., Stuchlikova, H., Stuchlik, J., Fojtik, P., Mates, T., Rezek, B., Luterova, K., Svrcek, V. and Pelant, I., Solar Energy Mater. & Solar Cells 78, 493 (2003).10.1016/S0927-0248(02)00449-XGoogle Scholar