Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T18:53:55.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Transport and Low Temperature Specific Heat Measurements of CrSi2 Single Crystals

Published online by Cambridge University Press:  15 February 2011

J. C. Lasjaunias ,
U. Gottlieb ,
O. Laborde ,
O. Thomas  and
R. Madar
J. C. Lasjaunias
Affiliation:
Centre de Recherches sur les Très Basses Températures, Laboratoire associè à l'Université J. Fourrier, CNRS BP 166, 38042 Grenoble Cedex 9, France
U. Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
O. Laborde
Affiliation:
Centre de Recherches sur les Très Basses Températures, Laboratoire associè à l'Université J. Fourrier, CNRS BP 166, 38042 Grenoble Cedex 9, France Laboratoire des Champs Magnétiques Intenses, CNRS, BP 166, 38042 Grenoble Cedex 9, France
O. Thomas
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
R. Madar
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
Get access

Abstract

We have measured the Hall coefficient and the resistivity of single crystals of CrSi2. This compound crystallises in the hexagonal C40 structure and is generally reported as a semiconductor with a gap of around 0.35 eV. The resistivity is large, several hundreds of μΩ.cm and exhibits a metallic behaviour. RH leads to a hole concentration of 8.5×1026 m−3 at 300K.

The specific heat at low temperature (0.7 K < T < 8 K ) can be describe as the sum of an electronic (γΓ) and a phonon (βT3) contribution. The analysis of the data leads to θD = 556 K and to an electronic density of states which is only two times smaller than those obtained for the metallic parent compounds VSi2, NbSi2 and TaSi2. This result questions the semiconducting nature of the chromium disilicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 343
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nava, F., Tu, K. N., Thomas, O., Senateur, J.P., Madar, R., Borghesi, A., Guizzetti, G., Gottlieb, U., Laborde, O. and Bisi, O., Materals Science Reports 9, 141 (1993).Google Scholar
2. Gottlieb, U., Laborde, O., Thomas, O., Rouault, A., Senateur, J. P. and Madar, R., Applied Surface Science 53, 247 (1991).Google Scholar
3. Nava, F., Tien, T. and Tu, K. N., J. Appl. Phys. 57, 2018 (1985).Google Scholar
4. Bost, M. C. and Mahan, J. E., J. Appl. Phys. 63, 839 (1988).Google Scholar
5. Voronov, B. K. Dudkin, L. D. and Trusova, N. N., Soy. Phys. Crystallography 12, 448 (1967).Google Scholar
6. Kaidanov, V. I., Tselishchev, V. A., Usov, A. P., Dudkin, L. D., Voronov, B. K. and Trusova, N. N., Soy. Phys. Semiconductors 4, 1135 (1971).Google Scholar
7. Zaitsev, V. K., Ordin, S. V., Fedorov, M. I. and Tselishchev, V. A., Soy. Phys. Solid State 34, 868 (1992).Google Scholar
8. Shinoda, D., Asanabe, S. and Sasaki, Y., J. Phys. Soc. Japan 19, 269 (1964).Google Scholar
9. Nishida, I., J. Mat. Science 7, 1119 (1972).Google Scholar
10. Nishida, I. and Sakata, T., J. Phys. Chem. Solids 39, 499 (1978).Google Scholar
11. Hirano, T. and Kaise, M., J. Appl. Phys. 68, 627 (1990).Google Scholar
12. Lasjaunias, J. C., Laborde, O., Gottlieb, U., Madar, R. and Thomas, O., J. Low Temp. Phys. 92,335 (1993).Google Scholar
13. Mattheiss, L. F., Phys. Rev. B 43, 12549 (1991).Google Scholar
14. Bellani, V., Guizzetti, G., Marabelli, F., Piaggi, A., Borghesi, A., Nava, F., VIAntonov, V. N.. Antonov, N., Jepsen, O., Andersen, O. K. and Nemoshkalenko, V. V., Phys. Rev. B 46, 9380 (1992).Google Scholar