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Transport Across Silicon Grain Boundaries

Published online by Cambridge University Press:  15 February 2011

J. Werner ,
W. Jantsch ,
K.H. Froehner  and
H.J. Queisser
J. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
W. Jantsch
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
K.H. Froehner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
H.J. Queisser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
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Abstract

By comparison of the capacitance and the conductivity of p–type Si bicrystals, we show quantitatively that current transport occurs through thermionic emission of holes across the potential barrier, which is caused by charged donors in the grain boundary. Starting from this finding, we propose a simple model which allows for the first time a spectroscopic determination of the grain boundary density of states from photocapacitance data. Results indicate the presence of band tails and additional mid-gap states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 99
Copyright
Copyright © Materials Research Society 1982

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References

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