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Transmission of Dirac Electrons Through Graphene Multilayers with Gaussian Profile

Published online by Cambridge University Press:  31 January 2012

J. A. Aguilar-Hernández ,
J. Madrigal-Melchor ,
J. C. Martínez-Orozco  and
I. Rodríguez-Vargas
J. A. Aguilar-Hernández
Affiliation:
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México
J. Madrigal-Melchor
Affiliation:
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México
J. C. Martínez-Orozco
Affiliation:
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México
I. Rodríguez-Vargas
Affiliation:
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México
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Abstract

In this work, we use the T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of SiO2-SiC substrates, of which we applied a Gaussian distribution in the size width of the SiC substrate. We calculate the transmittance as a function of energy for different incident angles and different number of layers of the Gaussian distribution. We obtain different stop-band regions. These regions are wider when the width of the barrier is increased. Furthermore, it is possible to tune the width and the position of stop-band with the angle of incidence, the σ value of the Gaussian distribution, and the difference between the maximum-minimum sizes of the barrier.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1371: Symposium S1 – Nanostructured Materials and Nanotechnology , 2012 , imrc11-1371-s1-p166
Copyright
Copyright © Materials Research Society 2012

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References

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