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Transient Thermal Analysis for Rapid Thermal Processing of GaAs

Published online by Cambridge University Press:  26 February 2011

F. K. Yang ,
S. J. Pien  and
R. Kwor
F. K. Yang
Affiliation:
University of Notre Dame, Dept. of Electrical and Computer Engineering
S. J. Pien
Affiliation:
University of Notre Dame, Dept. of Aerospace and Mechanical Engineering, Notre Dame, IN 46556
R. Kwor
Affiliation:
University of Colorado, Dept. of Electrical Engineering, Colorado Spring, CO 80933
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Abstract

A thermal analysis is performed to simulate the rapid heating process for ion implanted GaAs with consideration of the doping effect. The results are for cases with various concentrations and thicknesses of doping layer. Also studied are the heating processes for silicon dioxide capped GaAs. The effects of the thickness of the oxide layer are discussed. The magnitude of the temperature differences across the wafer is addressed. The present analysis considers xenon-arc lamps and tungsten-halogen lamps as the light sources.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 397
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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