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Transient Response and Space Charge Effects in Extrinsic Photoconductors

Published online by Cambridge University Press:  21 February 2011

N. M. Haegel ,
C. A. Latasa ,
G. L. Fong  and
A. M. White
N. M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles Los Angeles, CA 90024
C. A. Latasa
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles Los Angeles, CA 90024
G. L. Fong
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles Los Angeles, CA 90024
A. M. White
Affiliation:
Defense Research Agency, Royal Signals and Radar Establishment, Great Malvern, England
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Abstract

Transient response times for extrinsic photoconductors under constant voltage bias have been calculated using a variable finite-difference technique. We find that the transient response to a step function increase in photon signal is determined by the build-up of a space charge barrier to counteract out-diffusion and sweep-out. Transient times on the order of 10−2 – 10−4 s are found for 20–500 μm thick detectors under the photon backgrounds typical of infrared astronomy and other low background spectroscopy applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 113
Copyright
Copyright © Materials Research Society 1992

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References

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