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Transient Processing of Titanium Silicides in a Non-Isothermal Reactor

Published online by Cambridge University Press:  25 February 2011

C.S. Wei ,
J. Van Der Spiegel ,
J. Santiago  and
L.E. Seiberling
C.S. Wei
Affiliation:
Center for Chemical Electronics, Department of Electrical Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. Van Der Spiegel
Affiliation:
Center for Chemical Electronics, Department of Electrical Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. Santiago
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931
L.E. Seiberling
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, PA 19104
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Abstract

Transient processing of titanium silicides on single-crystal Si in a non-isothermal reactor provides high quality films. Heat from quartz-hal?gen tungsten lamps and a small temperature gradient act as driving forces for the reaction. The temperature gradient, small compared to the concentration gradient, shows negligible influence on the formation process. The influence of sample reflectivity on the other hand is appreciable. From Xe+ marker experiments, Si atoms are found to be the moving species either up or down the temperature gradient. Small amount of TiSi as an intermediate phase is found to be coexistent with TiSi2. The silicide formation of the implanted wafers is somewhat slower than that of the unimplanted wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 465
Copyright
Copyright © Materials Research Society 1985

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References

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