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Transient Photoconductivity Studies of a-Si:H Interfaces

Published online by Cambridge University Press:  28 February 2011

R. A. Street
R. A. Street*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The application of transient photoconductivity to the study of contacts and interfaces with a-Si:H is reviewed. The photocurrent is shown to contain three terms - one from the drift of photogenerated carriers, and two from contact and bulk effects due to the electric field induced by the drifting carriers. For different sample configurations, each of these terms can dominate, and each gives different information about a-Si:H bulk or surface electronic properties. The effects are illustrated with data from metal contacts, dielectric interfaces, doped layers and gap cell measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 79
Copyright
Copyright © Materials Research Society 1985

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References

1. Fritzsche, H., Semiconductors and Semimetals 21, Part C (1984).Google Scholar
2. Tanelian, M., Philos. Mag. B 45, 435 (1982).CrossRefGoogle Scholar
3. Thompson, M. J., Johnson, N. M., Nemanich, R. J., and Tsai, C. C., Appl. Phys. Lett. 39, 274 (1981).CrossRefGoogle Scholar
4. Street, B. A., Phys. Rev. B 27, 4924 (1983).Google Scholar
5. Street, R. A. and Thompson, M. J., Appl. Phys. Lett. 45, 769 (1984).Google Scholar
6. Tiedje, T., and Abeles, B., Appl. Phys. Lett. 45, 179 (1984).Google Scholar
7. Lang, D. V., Cohen, J. D., and Harbison, J. P., Phys. Rev. B 25, 5285 (1982).Google Scholar
8. Madan, A., LeComber, P. G. and Spear, W. E., J. non-Cryst. Solids 20, 239 (1976).Google Scholar
9. Datta, T. and Silver, M., Appl. Phys. Lett. 38, 905 (1981).Google Scholar
10. Street, R. A., Thompson, M. J. and Johnson, N. M., Philos. Mag. B 51, 1 (1985).Google Scholar
11. Street, R. A. and Thompson, M. J., AlP Conf. Proc. 120, 410 (1984).Google Scholar
12. Street, R. A., Phys. Rev., in press.Google Scholar
13. Kirby, P. B., MacLeod, D. W. and Paul, W., Philos. Mag., in press.Google Scholar
14. Tiedje, T., Topics in Applied Physics 56, 261 (1984).Google Scholar
15. Hvam, J. M. and Brodsky, M. H., Phys. Rev. Lett. 46, 371 (1981).CrossRefGoogle Scholar
16. Wronski, C. R. and Carlson, D. E., Solid State Commun. 23, 421 (1977).Google Scholar
17. Street, R. A., Zesch, J. and Thompson, M. J., Appl. Phys. Lett. 43, 672 (1983).Google Scholar
18. Aker, B., Peng, S-Q., Cai, S. and Fritzsche, H., J. non-Cryst. Solids 59 & 60, 509 (1983).Google Scholar
19. Street, R. A. and Zesch, J., Philos. Mag. B 50, L19 (1984).Google Scholar
20. Johnson, N. M., Appl. Phys. Lett. 42, 981 (1983).Google Scholar