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Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures
Published online by Cambridge University Press: 15 February 2011
Abstract
Dual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.
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- Copyright © Materials Research Society 1995
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