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Transient Decay Analysis in a-Si by Monte Carlo Method

Published online by Cambridge University Press:  26 February 2011

C. Manfredotti ,
A. Pavese ,
F. Fizzotti ,
U. Nastasi  and
G. Amato
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
A. Pavese
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
F. Fizzotti
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
U. Nastasi
Affiliation:
Experimental Physics Dept., University of Torino, Via P. Giuria 1, 10125 Torino (Italy)
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce, 10100 Torino (Italy)
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Abstract

Both the optical and transport properties of a-Si: H have been suitably parametrized as a function of Urbach's tail logarithmic slope Eo, surface density of states Ns and optical absorption normalization parameter αo, in order to reduce the number of parameters used for p-i-n solar cell S, simulation.

The transient photovoltaic effect has been simulated by a Monte Carlo multitrapping computer model in order to investigate the possibility of its use for p-i-n solar cell diagnostics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 611
Copyright
Copyright © Materials Research Society 1988

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References

1) Amer, N.M. and Jackson, W.B., “Semiconductors and Semimetals”, Vol. 27, Part B, Chapter 3.Google Scholar
2) Fravre, M., Curtins, H. and Shah, A.V., Int. Conf. on Amorphous Liquids and Semiconductors, Prague 1987Google Scholar
3) Street, R.A., Proc. of llth Int. Conf. on Amorphous and Liquid Semiconductors, Rome 1985, p.1Google Scholar
4) Ley, L., Poly-Micro-Crystalline and Amorphous Semiconductors, MRS Europe 1984, Eds. Pinard & Kalbitzer, p. 451Google Scholar
5) Pfister, G. and Scher, H., Phys. Rev. B15, 2062 (1977)Google Scholar
6) Manfredotti, C., Arione, E. and Vittone, E., Proc. IInd Int. PVSEC, Beging 1986, p.459Google Scholar