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Transient And Spatial Radiative Properties Of Patterned Wafers During Rapid Thermal Processing

Published online by Cambridge University Press:  15 February 2011

Peter Y. Wong ,
Ioannis N. Miaoulis  and
Cynthia G. Madras
Peter Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory Mechanical Engineering Department Tufts University, Medford, MA 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory Mechanical Engineering Department Tufts University, Medford, MA 02155
Cynthia G. Madras
Affiliation:
Thermal Analysis of Materials Processing Laboratory Mechanical Engineering Department Tufts University, Medford, MA 02155
*
*Author to whom all correspondence should be addressed
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Abstract

Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 15
Copyright
Copyright © Materials Research Society 1995

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