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Transient Absorption for Characterization of Quantum Dot Intermediate Band Solar Cells

Published online by Cambridge University Press:  16 September 2011

Praveen Kolla ,
Andrew Norman  and
Steve Smith
Praveen Kolla
Affiliation:
South Dakota School of Mines and Technology, Rapid City, South Dakota.
Andrew Norman
Affiliation:
NREL, Golden, Colorado.
Steve Smith*
Affiliation:
South Dakota School of Mines and Technology, Rapid City, South Dakota.
*
*Corresponding Author: [email protected]
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Abstract

We use transient absorption methods to characterize the sequential two-photon absorption in a quantum-dot super-lattice based intermediate band solar cell (QD-IBSC). Using collinear, orthogonally polarized beams generated from an Optical Parametric Oscillator (OPO) at varying time delay, tuned stepwise from 1050nm to 1250nm, we use the solar cell photocurrent as a direct measure of the transient absorption by measuring the differential photo-current as a function of time delay between two energetically degenerate, 100fs pulses. For comparison, we measure the pulse autocorrelation in the same geometry using a GaAsP photodiode, where all observed photocurrent is derived from instantaneous two-photon absorption. Our measurements show that at high intensity, the measurement is dominated by instantaneous two photon absorption, with a simultaneous sequential two-photon photocurrent which persists beyond the pulse overlap. Our measurements demonstrate the method can reveal carrier dynamics in a working QD-IBSC, and their dependence on energy. The method could potentially give details of the band structure formed in the QD-IBSC. Such knowledge may benefit device development and future designs of IBSCs based on QD superlattices or alternative intermediate band materials or device structures.

Keywords

semiconductingphotovoltaicoptical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1289: Symposium H – Controlling Material Properties and Charge-Carrier Interactions with Quantum-Dot Coupling , 2011 , mrsf10-1289-h04-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Shockley, W. and Queisser, H., “Detailed Balance Limit of efficiency of pn-junction solar cell,” Journal of Appl. Physics 32 (3) (1961).Google Scholar
[2] Luque, A. and Marti’, A., “Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels”, Phys. Rev. Lett. 78 5014 (1997).Google Scholar
[3] Martı´, A., Lo´pez, N., Antolı´n, E., Ca´novas, E., Stanley, C., Farmer, C., Cuadra, L., Luque, A., “Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell”, Thin Solid Films 511–512 638 (2006) .Google Scholar
[4] Marti, A., Antolin, E., Stanley, C. R., Farmer, C. D., Lopez, N., Diaz, P., Canovas, E., Linares, P. G., and Luque, A.. “Production of photocurrent due to intermediate-to-conduction-band transition: A demonstration of a key operating principle of the intermediate-band solar cell”, Phys. Rev. Lett. 97, 247701 (2006).Google Scholar
[5] Popescu, V., Bester, G., Hanna, M. C., Norman, A. G., and Zunger, A.. “Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga)As/Ga(As, P) quantum dot solar cells”, Phys. Rev. B. 78 205321 (2008).Google Scholar
[6] Singh, J., Semiconductor Optoelectronics Physics and Technology, McGraw-Hill, New York (1995).Google Scholar
[7] Taylor, AJ, Erskine, DJ and Tang, CL, “Equal pulse correlation technique for measuring femtosecond excited state relaxation times,” Appl Phys Lett 43 1 (1983).Google Scholar
[8] Kim, K., Urayama, J. and Norris, T.B., “Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots” Appl. Phys. Lett., 81 (670) (2002).Google Scholar
[9] Akiyama, T., Kuwatsuka, H., Simoyama, T., Nakata, Y., Mukai, K., Sugawar, M., Wada, O. and Ishikawa, H., IEEE J. Quant. Elec. 37, 1059 (2001).Google Scholar
[10] Yu, Pingrong, Nedeljkovic, Jovan M., Ahrenkiel, Phil A., Ellingson, Randy J., and Nozik, Arthur J., “Size dependent femto-second electron cooling dynamics in CdSe quantum rods,” Nano Letters, 4(6), 1089–1092 (2004).Google Scholar
[11] Klimov, Victor I. and McBranch, Duncan W., “Femtosecond 1 P-to-1 S Electron Relaxation in Strongly Confined Semiconductor Nanocrystals,” Phys. Rev. Lett. 80 4028 (1998).Google Scholar
[12] Banyai, L. and Koch, S.W., Semiconductor Quantum Dots, World Scientific, Singapore (1993).Google Scholar
[13] Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures, Wiley and Sons, New York (1993).Google Scholar
[14] Solomon, G. S., Trezza, J. A., Marshall, A. F., and Harris, J. S. Jr., “Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs, ” Phys. Rev. Lett. 76 952 (1996).Google Scholar
[15] Tomić, Stanko, Jones, Tim S., and Harrison, Nicholas M., “Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design,” Appl. Phys. Lett. 93 263105 (2008).Google Scholar
[16] Cánovas, E., Martí, A., López, N., Antolín, E., Linares, P.G., Farmer, C.D., Stanley, C.R., Luque, A., “Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells,” Thin Solid Films 516 6943 (2008).Google Scholar
[17] Davies, P. C. W., “Quantum tunneling time,” Am. J. Phys. 73 23 (2005).Google Scholar
[18] Zhou, D., Sharma, G., Thomassen, S. F., Reenaas, T. W., and Fimland, B. O., “Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy, ” Appl. Phys. Lett. 96 061913 (2010).Google Scholar