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Towards a High Quality Factor DC Electric Field Switchable Barium Strontium Titanate Solidly Mounted Resonator

Published online by Cambridge University Press:  31 January 2011

George N. Saddik
Affiliation:
[email protected], University of California Santa Barbara, Electrical and Computer Engineering, Santa Barbara, United States
Junwoo Son
Affiliation:
[email protected], University of California Santa Barbara, Materials, Santa Barbara, United States
Susanne Stemmer
Affiliation:
[email protected], University of California, Santa Barbara, Materials, Santa Barbara, California, United States
Robert A. York
Affiliation:
[email protected], University of California Santa Barbara, Electrical and Computer Engineering, Santa Barbara, United States
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Abstract

Barium strontium titanate solidly mounted resonators (SMR) were fabricated with three different acoustic Bragg reflectors (ABR) on a sapphire substrate. The three devices had ABR structures consisting of W/SiO2/W/SiO2, Mo/SiO2/Mo/SiO2, and Pt/SiO2/Pt/SiO2 respectively. The s-parameters of all three devices were measured. The results showed that the quality factor increased as a function of the material in the ABR structure. The quality factor for the devices with tungsten, molybdenum and platinum in the ABR structures are 101, 88, and 31, respectively. This investigation showed how the material in the ABR structure can contribute to the acoustic loss in the device.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Acikel, B., Taylor, T.R., Hansen, P.J., Speck, J.S., and York, R.A., “A New X Band 180° High Performance Phase Shifter Using (Ba,Sr)TiO3 Thin Films,” in IEEE MTT-S Int. Microwave Symp. Dig. , pp.14671469, June 2002.Google Scholar
2 Chen, L.Y. Vicki, Forse, R., Chase, D., and York, R.A., “Analog Tunable Matching Network Using Integrated Thin-Film BST Capacitors,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 261264, June 2004.Google Scholar
3 Tombak, A., Maria, J-P., Ayguavives, F.T., Zhang, J., Stauf, G.T., Kingon, A., and Mortazawi, A., “Voltage-controlled RF filters employing tin-film Barium-Strontium-Titanate Tunable Capacitors,” IEEE Trans. Microwave Theory Tech., Vol. 51, pp. 462467, Feb. 2003.Google Scholar
4 Tappe, S., Böttger, U., and Waser, R., “Electrostrictive resonances in Ba0.7Sr0.3TiO3 thin films at microwave frequencies,” Appl. Phys. Lett., vol. 85, pp. 624626, 2005.Google Scholar
5 Saddik, G.N., Boesch, D.S., Stemmer, S., and York, R.A., “Strontium Titanate DC Electric Field Switchable and tunable Bulk Ascoustic Wave Solidly Mounted Resonator,“ IEEE MTTS Int. Microwave symp. Dig pp.12631266, June 2008.Google Scholar
6 Xinen, Z. and Phillips, J.andMortazawi, A. “A DC Voltage Dependant Switchable Thin film Bulk Wave Acoustic Resonator Using Ferroelectric Thin Film,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 671674, June 2007.Google Scholar
7 Newell, W. E., “Face-Mounted Piezoelectric Resonators,” Proceeding of the IEEE, vol. 53, no. 6, June 1965.Google Scholar
8 Schmidt, S., Klenov, D.O., Keane, S.P., Lu, J., Mates, T.E., and Stemmer, S., “Atomic structure of (111) SrTiO3/Pt interfaces,” Appl. Phys. Lett., vol. 88, 131914, 2006.Google Scholar
9 Larson, J.D. III, Bradley, P.D., Wartenberg, S., and Ruby, R.C., “Modified Butterworth Van Dyke Circuit for FBAR resonators, and Automated Measurement System,” IEEE Ultrasonic Symposium, vol. 1, pp. 863868, Oct. 2000.Google Scholar
10 Rosenbaum, J., Bulk Acoustic Wave Theory and Devices, Massachusetts: Artech House, 1988.Google Scholar