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Toward Growing III-V Clusters with Metalorganic Precursors

Published online by Cambridge University Press:  10 February 2011

A. Demchuk ,
J. Porter  and
B. Koplitz
A. Demchuk
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118–5698
J. Porter
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118–5698
B. Koplitz
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118–5698
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Abstract

The present work reports on the formation of GaN-containing clusters from metalorganic precursors by combining pulsed laser photolysis and pulsed nozzle methods. Ammonia (NH3) and triethylgallium (C2H5)3Ga (TEG) or trimethylgallium (CH3)3Ga (TMG) with He, Ar, or N2 as the carrier gas are introduced into a high vacuum chamber via a specialized dual pulsed nozzle source. The light from an ArF excimer laser (193 nm, 23 ns FWHM) is focused into the mixing and reaction region of the nozzle source, and the products are then mass analyzed with a quadrupole mass spectrometer. Efficient laser-assisted growth of (GaN)x-containing clusters is shown with this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 45
Copyright
Copyright © Materials Research Society 1997

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References

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