Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T09:45:54.305Z Has data issue: false hasContentIssue false

A Totally Wet Etch Fabrication Technology for Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Amir Masoud Miri
Affiliation:
University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Ontario Canada N2L 3G1.
Savvas G. Chamberlain
Affiliation:
University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Ontario Canada N2L 3G1.
Get access

Abstract

We developed a totally wet etch processing technology for the fabrication of inverted staggered amorphous silicon thin-film transistors (TFTs) and circuits. In this technology we take advantage of highly etch selective KOH and HF base solutions for amorphous silicon and silicon nitride layers. Our technology is simple, reproducible, fully compatible with positive photo-resist lithography techniques, and suitable for mass production of amorphous silicon TFT based circuits. Using this process, we fabricated thin film transistors which have an effective mobility of 0.83 cm2 V−1 s−1, threeshold voltage of 2V and on/off current ratio of 107. In this paper we discuss the details of our fabrication process and report on the chemical conditions of the etching and deposition processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Street, R. A., Mater. Res. Bulletin, pp. 7076, 1992.Google Scholar
[2] McGrodyl, J. C., IBM J. of Res. and Development, 36 1992.Google Scholar
[3] Kuo, Y., IBM J. of Res. and Development, 36, pp. 6975, 1992.Google Scholar
[4] Kuo, Y., Appl. Phys. Lett., 61, pp. 27902792, 1992.Google Scholar
[5] Mort, J. and Jansen, F., Plasma Deposited Thin Films, (CRC Press Inc. 1986).Google Scholar
[6] GadelRab, S. and Chamberlain, S. G., IEEE Tran. Elect. Dev., 41 pp. 462464, 1994.Google Scholar
[7] Hassani, N., Master Thesis, Univ. of Waterloo, 1994.Google Scholar
[8] Parsons, G. N., IEEE Elect. Dev. Lett., 13, pp. 8082, 1992.Google Scholar