Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:29:56.652Z Has data issue: false hasContentIssue false
  • English
  • Français

Top Gate Self-Aligned μc-Si TFTs using Layer-by-Layer Method and Ion-doping Method

Published online by Cambridge University Press:  14 March 2011

Yukihiko Nakata ,
Yasuaki Murata  and
Masaya Hijikigawa
Yukihiko Nakata
Affiliation:
Sharp Laboratories of America, LCD Process Tech. Department 5700 NW Pacific Rim Boulevard, Camas, WA 98607, U.S.A.
Yasuaki Murata
Affiliation:
Sharp Corporation, LCD Development Group 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan
Masaya Hijikigawa
Affiliation:
Sharp Corporation, LCD Development Group 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan
Get access

Abstract

We investigated the Layer-by-Layer method to obtain thin μc-Si films. Good quality μc-Si films can be obtained at a thickness of 600 Å Ion-doping of phosphor to i-type μc-Si was investigated to realize the top-gate, self-aligned μc-Si TFT. High conductivity, more than 1 ohm-cm, can be obtained. Using the combination of Layer-by-Layer deposition method and ion-doping method, we fabricated top gate self-aligned μc-Si TFTs. The mobility of TFTs with 600Å-thick μc-Si channel layer is 1.5 cm2/Vs, which is about three times that of a-Si TFT's mobility. The top gate self-aligned μc-Si TFT is very promising technology for large LCD with high mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.2.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFFERENCES

1. Matsuda, A., Journal of Non-Crystalline Solids, 59 & 60, 767 (1983).Google Scholar
2. Nomoto, K., Urano, Y., Guizot, J., Ganguly, G. and Matsuda, A., Jpn. J. Appl. Phys., 29, L1372 (1990).Google Scholar
3. Otobe, M. and Oda, S., Jpn. J. Appl. Phys., 31, 1948 (1992).Google Scholar
4. Chen, Y. and Wagner, S., Mat. Res. Soc. Symp. Proc., 556, 665, (1999)Google Scholar
5. Kawai, K., Sakurai, T., Katayama, M., Nagayasu, T., Kondo, N., Nakata, Y., Mizushima, S., Yano, K. and Hijikigawa, M., SID 93 Digest, 743 (1993).Google Scholar