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Ti-W-N Deposition Stress as a Function of Microstructure

Published online by Cambridge University Press:  15 February 2011

A. Witvrouw ,
W. De Bosscher ,
B. Deweerdt ,
R. Verbeeck ,
F. Loosen ,
Ph. Roussel  and
K. Maex
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
W. De Bosscher
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
B. Deweerdt
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
R. Verbeeck
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
F. Loosen
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Ph. Roussel
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
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Abstract

160 nm Ti-W-N layers were sputtered on Si/SiO2/Al-Si-Cu substrates with the thickness of the Al-Si-Cu layer varying between 0 and 1000 nm. As a result the apparent grain size of the Ti-W-N increased from 40 to 130 nm and the compressive deposition stress of the Ti-W-N decreased from 1.77 to 0.34 GPa. The relation between stress and the inverse grain size was found to be linear for grain sizes smaller than 130 nm. Assuming a simple model, the excess volume per unit area of grain boundary can be estimated from the slope of the fit and was found to be 0.17 nm.

Light scattering measurements can be used as a quick and non-destructive method for evaluating the microstructure of these layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 51
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Dirks, A.G., Wolters, R.A.M. and Nelissen, A.J., Thin Solid Films, 193/194, 201–210 (1990).CrossRefGoogle Scholar
2 Dirks, A.G., Wolters, R.A.M. and De Veirman, A.E.M., Mat. Res. Soc. Symp. Proc. 260 787 (1992).Google Scholar
3 Pramanik, D. and Jain, V., Proc. 7th Int'l IEEE VMIC, 332 (1990).Google Scholar
4 Küper, W., private communication.Google Scholar
5 Bourhila, N., Internal Report DÆEC (1991).Google Scholar
6 Westra, K.L. and Thomson, D.J., Mat. Res. Soc. Symp. Proc. 260, 599 (1992).Google Scholar
7 Doerner, M.F. and Nix, W.D., CRC Critical reviews in Solid State and Materials Science 14 225 (1988).Google Scholar
8 Nix, W.D., Met. Trans. A, 20A, 2217 (1989).Google Scholar
9 Gardner, D.S. and Flinn, P.A., IEEE Trans, on El. Dev. 35, 2160 (1988).Google Scholar
10 Witvrouw, A., unpublished results.Google Scholar
11 De Bosscher, W., Matilainen, M., Witvrouw, A. and Maex, K., Proc. RMS Conf. 1993, to be published in Appl. Surf. Sci. Google Scholar