Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T18:48:10.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Tisi2 Characterization of CVD-Titanium and RTP on a Cluster Platform–an Initial Investigation

Published online by Cambridge University Press:  15 February 2011

Steven D. Marcus  and
Lutz Deutschmann
Steven D. Marcus
Affiliation:
AST elektronik, USA, Inc., 7755 S. Research Dr. Suite 115, Tempe, AZ 85284
Lutz Deutschmann
Affiliation:
AST elektronik GmbH, Daimlerstrabe 10, D-89160 Dornstadt, Germany
Get access

Abstract

The silicidation of chemical vapor deposited (CVD) titanium has been investigated utilizing the Materials Research Corporation (MRC) PHOENIX™ cluster-tool platform which incorporated an AST elektronik GmbH cluster RTP chamber. This initial investigation focuses on C49 and C54 TiSi2 phase formation on bare silicon wafers. Equipment description, process results, comparison to classical PVD Ti silicide processing and future investigations will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 437
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Mann, R.W. and Clevenger, L.A., J. Electrochem. Soc., Vol 141, No. 5, 1347 (1994).Google Scholar
[2] Georgiou, G.E., Abiko, H., Baiocchi, F.A., Ha, N.T. and Nakahara, S., J. Electrochem. Soc., Vol 141, No.5, 1351 (1994).Google Scholar
[3] Mann, R.W., Racine, C.A. and Bass, R.S. in Rapid Thermal and Integrated Processing, edited by Gelpey, J., Green, M., Singh, R. and Wortman, J. (Mater. Res. Soc. Proc. 224, Pittsburgh, PA, 1991) pp. 115–122.Google Scholar
[4] Hung, L.S., Gyulai, J. and Mayer, J.W., J. Appl. Phys. 54 (9), 5076 (1983).Google Scholar
[5] Osburn, C.M., in Rapid Thermal Processing, edited by Fair, R.B. (Academic Press, Inc., Harcourt Brace Javanovich, Publishers, 1993) pp.227–309.Google Scholar
[6] Nulman, J., in Rapid Thermal and Integrated Processing, (Mater. Res. Soc. Proc. 181, Pittsburgh, PA, 1990) pp. 123–132.Google Scholar
[7] Ameen, M.S., Hillman, J.T., Faguet, J., Foster, R.F., Arena, C., Martin, F. in Conference Proceedings ULSI -X 1995, pp. 269–275.Google Scholar
[8] Nulman, J., in Rapid Thermal and Integrated Processing. (Mater. Res. Soc. Proc. 181, Pittsburgh, PA, 1990) pp. 123–132.Google Scholar
[9] Studiner, D.W., Hillman, J.T., Arora, R. and Foster, R.F. in Advanced Metallization for ULSI Applications 1992, edited by Cale, T. and Pintchovski, F. (Mater. Res. Soc. Proc., Pittsburgh, PA, 1993) pp. 211–217.Google Scholar
[10] Ameen, M.S., Hillman, J.T., Faguet, J., Foster, R.F., Arena, C., Martin, F. in Conference Proceedings ULSI -X 1995, pp. 269–275.Google Scholar
[11] Arena, C., Faguet, J., Foster, R.F., Hillman, J.T., Martin, F., Morand, Y. in Conference Proceedings ULSI -X 1995, pp. 269–275.Google Scholar
[12] Ameen, M.S., Hillman, J.T., Faguet, J., Foster, R.F., Arena, C., Martin, F. in Conference Proceedings ULSI -X 1995, pp. 269–275.Google Scholar