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Tin-Doping Induced Defects in GaAs Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. H. Chen ,
P. Enquist  and
C. B. Carter
S. H. Chen
Affiliation:
Department of Materials Science and Engineering
P. Enquist
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering
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Abstract

Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 369
Copyright
Copyright © Materials Research Society 1985

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References

1. Cho, A. Y., J. Appl. Phys. 46, 1733 (1975).10.1063/1.321777CrossRefGoogle Scholar
2. Ploog, K. and Fischer, A., J. Vac. Sci. Technol. 15, 255 (1978).10.1116/1.569563Google Scholar
3. Wood, C.E.C. and Joyce, B. A., J. Appl. Phys. 49, 4854 (1976).10.1063/1.325517Google Scholar
4. Alexandre, F., Raisin, C., Abdalla, M. I., Brence, A., and Masson, J. M., J. Appl. Phys. 51, 4296 (1980).10.1063/1.328248Google Scholar
5. Wood, C.E.C., UeSimone, D., and Jedaprawira, S., J. Appl. Phys. 51, 2074 (1980).10.1063/1.327876CrossRefGoogle Scholar
6. Harris, J. J., Joyce, B. A., Gowers, J. P., and Neave, J. H., Appl. Phys. A 28, 63 (1982).10.1007/BF00617784Google Scholar
7. -Heckingbottom, R., Davis, G. J., and Prior, K. A., Surface Sci. 132, 375 (1983).10.1016/0039-6028(83)90548-4Google Scholar
8. Rockett, A., Drummond, T. J., Greene, J. E., and Morkoc, H., J. Appl. Phys. 53, 10 (1982).10.1063/1.330013Google Scholar
9. Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (John Wiley & Sons, New York, 1983), pp. 22–26.Google Scholar
10. Panish, M. B., J. Less-Common Metals, 10 416 (1966).10.1016/0022-5088(66)90099-3CrossRefGoogle Scholar