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Tin E' Centers in X-Ray Irradiated Sn-Doped Silica

Published online by Cambridge University Press:  15 February 2011

N. Chiodini ,
F. Meinardi ,
F. Morazzoni ,
A. Paleari ,
R. Scotti  and
G. Spinolo
N. Chiodini
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 MilanoItaly, [email protected]
F. Meinardi
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 MilanoItaly, [email protected]
F. Morazzoni
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 MilanoItaly, [email protected]
A. Paleari
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 MilanoItaly, [email protected]
R. Scotti
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 Milano, Italy
G. Spinolo
Affiliation:
INFM – Dipartimento di Scienza dei Materiali, Universitá di Milano, via Cozzi, 53, 20126 MilanoItaly, [email protected]
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Abstract

Sn centers are point defects easily formed by X-ray irradiation of Sn-doped silica. Point defects are a tool for assessing the substitutional character of the dopant in Sn-doped SiO2 glasses with different Sn content (SnO2/SiO2 ratio from 0.01 to 10.0 % w/w) and prepared by two sol-gel methods differing in tin precursors (tin tetraterbutoxide and tin dibutyldiacetate). The former method produced transparent crack-free monolithic glasses of Sn-doped silica with maximum tin content of 0.1 % (SnO2/SiO2 % w/w). The latter method is more efficient and produced transparent glasses with a tin content of 1%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 383
Copyright
Copyright © Materials Research Society 1999

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