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Time-Resolved Switching Studies in a-Si:H and Related Films

Published online by Cambridge University Press:  01 February 2011

P. Stradins ,
W. B. Jackson ,
H. M. Branz ,
J. Hu ,
C.L. Perkins  and
Qi Wang
P. Stradins
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, Colorado 80401, USA
W. B. Jackson
Affiliation:
Hewlett Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USA
H. M. Branz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, Colorado 80401, USA
J. Hu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, Colorado 80401, USA
C.L. Perkins
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, Colorado 80401, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, Colorado 80401, USA
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Abstract

Switching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested – a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A2.4
Copyright
Copyright © Materials Research Society 2003

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References

1. Hajto, J., Owen, A. E., Snell, A. J., Lecomber, P. G. and Rose, M. J., in: Amorphous and Crystalline Semiconductor Devices, ed. by Kanicki, J. (Artech House, 1992).Google Scholar
2. Street, R. A., Hydrogenated Amorphous Silicon (Cambridge Univ. Press, 1991).Google Scholar
3. Lecomber, P. G., Owen, A. E., Spear, W. E., Hajto, J., Snell, A. J., Choi, W. K., Rose, M. J. and Reynolds, S., J. Non-Cryst. Solids 77-8 (1985) 1373.Google Scholar
4. Jafar, M. and Haneman, D., Phys. Rev. B 49 (1994) 4605.Google Scholar
5. Jafar, M. and Haneman, D., Phys. Rev. B 49 (1994) 13611.Google Scholar
6. Hu, J., Branz, H.M., Crandall, R.S., Ward, S., Perkins, C. and Wang, Q., Mat. Res. Soc. Proc. 715 (2002) 763.Google Scholar
7. Nakayama, Y., Stradins, P. and Fritzsche, H., J. Non-Cryst. Solids 166 (1993) 1061.Google Scholar