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Time-Resolved Study of Silicon During Pulsed-Laser Annealing

Published online by Cambridge University Press:  15 February 2011

B. C. Larson ,
C. W. White ,
T. S. Noggle ,
J. F. Barhorst  and
D. M. Mills
B. C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
T. S. Noggle
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. F. Barhorst
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
D. M. Mills
Affiliation:
Cornell High Energy Synchrotron Source and School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14850
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Abstract

Near surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 43
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*.

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation. The CHESS portion of this research was supported by the National Science Foundation.

References

REFERENCES

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