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Time-Resolved Studies of Rapid Solidification in Highly Undercooled Molten Silicon*

Published online by Cambridge University Press:  25 February 2011

D.H. Lowndes ,
G.E. Jellison Jr. ,
R.F. Wood ,
S.J. Pennycook  and
R.W. Carpenter
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
G.E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
R.F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
R.W. Carpenter
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ85287
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Abstract

A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 nm and 1.15 μm) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. The time-resolved measurements provide new experimental information about the nucleation of fine-grained Si crystallites in undercooled liquid Si, at low laser energy densities (Eℓ), and about the growth of large-grained Si in the near-surface region at higher Eℓ. Measurements with the infrared probe beam reveal the presence of a buried, propagating liquid layer at low ??. Model calculations indicate that this liquid layer is generated in part by the release of latent heat associated with the nucleation and growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 101
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, . S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems,Inc.

References

REFERENCES

1. The melting temperatures of a-Si and a-Ge have been the subject of numerous recent publications. Please see the references to this literature that are given in our Refs. 2, 3, and 6 below.Google Scholar
2. Lowndes, D. H., Wood, R. F., and Narayan, J., Phys. Rev. Lett. 52, 561 (1984).Google Scholar
3. Wood, R. F., Lowndes, D. H., and Narayan, J., Appl. Phys. Lett. 44, 770 (1984).Google Scholar
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6. Thompson, M. O., Galvin, G. J., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G., and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
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8. Lowndes, D. H., Jellison, G. E. Jr., and Wood, R. F. (to be submitted to The Physical Review).Google Scholar