Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:39:43.439Z Has data issue: false hasContentIssue false
  • English
  • Français

Time-Resolved Reflectivity Measurements of Silicon And Germanium Using A Pulsed Excimer Laser*

Published online by Cambridge University Press:  26 February 2011

G. E. Jellison Jr ,
D. H. Lowndes ,
D. N. Mashburn  and
R. F. Wood
G. E. Jellison Jr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. N. Mashburn
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Time-resolved reflectivity measurements of silicon and germanium have been made during pulsed KrF excimer laser irradiation. The reflectivity was measured simultaneously at both 1152 and 632.8 nm wavelengths, and the energy density of each laser pulse was monitored. The melt duration and the time of the onset of melting were measured and compared with the results of melting model calculations. For energy densities just above the melting threshold, it was found that the melt duration was never less than 20 ns for Si and 25 ns for Ge, while the maximum reflectivity increased from the value of the hot solid to that of the liquid over a finite energy range. These results, along with a reinterpretation of earlier time-resolved ellipsometry measurements, indicate that, during the melt-in process, the near-surface region does not melt homogeneously, but rather consists of a mixture of solid and liquid phases. The reflectivity at the onset of melting and in the liquid phase have been measured at both 632.8 and 1152 nm, and are compared with the results found in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 143
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy, under Contract No. DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Pulsed Laser Processing of Semiconductors, (Semiconductors and Semimetals, Vol. 23, Wood, R. F., White, C. W., and Young, R. T., eds., Academic Press, New York, 1984).Google Scholar
2. Lowndes, D. H., Jellison, G. E. Jr, and Wood, R. F., Phys. Rev. B 26, 6747 (1982); D. H. Lowndes, Phys. Rev. Lett. 48, 267 (1982).Google Scholar
3. Lowndes, D. H., Wood, R. F., and Westbrook, R., Appl. Phys. Lett. 43, 258 (1983).CrossRefGoogle Scholar
4. Galvin, G. J., Thompson, M. O., Mayer, J. W., Peercy, P. S., Hammond, R. B., and Paulter, N., Phys. Rev. B 27, 1079 (1983); M. O. Thompson, J. W. Mayer, A. G. Cullis, H. C. Weber, N. G. Chew, J. M. Poate, and D. C. Jacobson, Phys. Rev. Lett. 50, 896 (1983).Google Scholar
5. Ving, L., Logothetidis, S., and Cardona, M., Phys. Rev. B 30, 1979 (1984).Google Scholar
6. Jellison, G. E. Jr and Lowndes, D. H., Proc. Mat. Res. Soc. Symp. 35, 113 (1985).Google Scholar
7. Jellison, G. E. Jr and Lowndes, D. H., Appl. Phys. Lett. 47, 718 (1985).Google Scholar
8. Bruggeman, D. A. G., Ann. Phys. (Leipzig) 24, 636 (1935).Google Scholar
9. Burke, H. H. and Jellison, G. E. Jr, to be published.Google Scholar
10. Hodgson, J. N., Phil. Mag. 64, 509 (1961).Google Scholar
11. Wood, R. F. and Giles, G., Phys. Rev. B 23, 2923 (1981).Google Scholar
12. Geist, G. A. and Wood, R. F., ORNL-6242 (1985).Google Scholar
13. Francois, J. C., Chassaing, G., Argeme, L., and Pierrisnard, R., J. Optics 16, 47 (1985).Google Scholar